Details
| Original language | English |
|---|---|
| Article number | 001 |
| Pages (from-to) | 131-153 |
| Number of pages | 23 |
| Journal | Semiconductor Science and Technology |
| Volume | 8 |
| Issue number | 2 |
| Publication status | Published - 1 Dec 1993 |
| Externally published | Yes |
Abstract
Many magnetotransport experiments in two-dimensional electron systems have been explained in recent years within the so-called edge-state model. Starting from a historical context, the model is described. Experiments in Hall-bar geometries with and without gate barriers are reviewed and discussed in terms of the edge-state picture.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Materials Chemistry
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In: Semiconductor Science and Technology, Vol. 8, No. 2, 001, 01.12.1993, p. 131-153.
Research output: Contribution to journal › Review article › Research › peer review
}
TY - JOUR
T1 - Edge-state transport and its experimental consequences in high magnetic fields
AU - Haug, R. J.
PY - 1993/12/1
Y1 - 1993/12/1
N2 - Many magnetotransport experiments in two-dimensional electron systems have been explained in recent years within the so-called edge-state model. Starting from a historical context, the model is described. Experiments in Hall-bar geometries with and without gate barriers are reviewed and discussed in terms of the edge-state picture.
AB - Many magnetotransport experiments in two-dimensional electron systems have been explained in recent years within the so-called edge-state model. Starting from a historical context, the model is described. Experiments in Hall-bar geometries with and without gate barriers are reviewed and discussed in terms of the edge-state picture.
UR - http://www.scopus.com/inward/record.url?scp=0027540160&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/8/2/001
DO - 10.1088/0268-1242/8/2/001
M3 - Review article
AN - SCOPUS:0027540160
VL - 8
SP - 131
EP - 153
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 2
M1 - 001
ER -