Details
| Original language | English |
|---|---|
| Pages (from-to) | 259-263 |
| Number of pages | 5 |
| Journal | Progress in Photovoltaics: Research and Applications |
| Volume | 6 |
| Issue number | 4 |
| Publication status | Published - 21 Dec 1998 |
| Externally published | Yes |
Abstract
A novel, easily applicable surface passivation technique is presented, which, in combination with contactless photocoductance decay (PCD) measurements, allows a quick estimation of the bulk carrier lifetime of crystalline silicon wafers. The proposed passivation technique requires neither a chemical pre-cleaning of the silicon wafer nor expensive instrumentation. On both surfaces of the wafer a thin varnish film is deposited using a spinner. Subsequently, both surfaces of the coated silicon wafer are charged by means of a corona chamber. Using microwave-detected PCD measurements, we experimentally demonstrate that this novel surface passivation scheme provides differential surface recombination velocities in the 30-70 cm s-1 range on p-as well as n-type silicon wafers.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
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In: Progress in Photovoltaics: Research and Applications, Vol. 6, No. 4, 21.12.1998, p. 259-263.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Easy-to-use surface passivation technique for bulk carrier lifetime measurements on silicon wafers
AU - Schmidt, Jan
AU - Aberle, Armin G.
PY - 1998/12/21
Y1 - 1998/12/21
N2 - A novel, easily applicable surface passivation technique is presented, which, in combination with contactless photocoductance decay (PCD) measurements, allows a quick estimation of the bulk carrier lifetime of crystalline silicon wafers. The proposed passivation technique requires neither a chemical pre-cleaning of the silicon wafer nor expensive instrumentation. On both surfaces of the wafer a thin varnish film is deposited using a spinner. Subsequently, both surfaces of the coated silicon wafer are charged by means of a corona chamber. Using microwave-detected PCD measurements, we experimentally demonstrate that this novel surface passivation scheme provides differential surface recombination velocities in the 30-70 cm s-1 range on p-as well as n-type silicon wafers.
AB - A novel, easily applicable surface passivation technique is presented, which, in combination with contactless photocoductance decay (PCD) measurements, allows a quick estimation of the bulk carrier lifetime of crystalline silicon wafers. The proposed passivation technique requires neither a chemical pre-cleaning of the silicon wafer nor expensive instrumentation. On both surfaces of the wafer a thin varnish film is deposited using a spinner. Subsequently, both surfaces of the coated silicon wafer are charged by means of a corona chamber. Using microwave-detected PCD measurements, we experimentally demonstrate that this novel surface passivation scheme provides differential surface recombination velocities in the 30-70 cm s-1 range on p-as well as n-type silicon wafers.
UR - http://www.scopus.com/inward/record.url?scp=0032120639&partnerID=8YFLogxK
U2 - 10.1002/(SICI)1099-159X(199807/08)6:4<259::AID-PIP215>3.0.CO;2-Z
DO - 10.1002/(SICI)1099-159X(199807/08)6:4<259::AID-PIP215>3.0.CO;2-Z
M3 - Article
AN - SCOPUS:0032120639
VL - 6
SP - 259
EP - 263
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
SN - 1062-7995
IS - 4
ER -