Details
| Original language | English |
|---|---|
| Pages (from-to) | 1832-1837 |
| Number of pages | 6 |
| Journal | Microelectronics reliability |
| Volume | 55 |
| Issue number | 9-10 |
| Publication status | Published - Aug 2015 |
Abstract
Material movement between solder joints and their contact pads leads to the formation of intermetallic compounds at the contact surfaces. Concentration gradients are responsible for this material movement. The intermetallic compound growth during temperature storage and AC/DC electromigration tests on 12 × 12 mm Amkor® PoP with SnAg3.0Cu0.5 ball grid arrays including direct SnAgCu to Cu contacts at their bottom bumps was investigated. Based on the resulting increase in the IMC thickness the average mass flux of Cu and Sn were calculated. The activation energies (EA) diffusion constants (D0), effective charges (Z∗) and heats of transport (Q∗) are determined by measurement. With these parameters the mass fluxes due to concentration gradients, electromigration and thermomigration are calculated and the results were implemented in a routine for the dynamical calculation of the IMC-growth. Finally these calculations were validated by measurements.
Keywords
- IMC growth, Migration, Package on package, Packaging and assembly, Reliability, Simulation
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Engineering(all)
- Safety, Risk, Reliability and Quality
- Physics and Astronomy(all)
- Condensed Matter Physics
- Materials Science(all)
- Surfaces, Coatings and Films
- Engineering(all)
- Electrical and Electronic Engineering
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Microelectronics reliability, Vol. 55, No. 9-10, 08.2015, p. 1832-1837.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Dynamical IMC-growth calculation
AU - Meinshausen, L.
AU - Weide-Zaage, K.
AU - Frémont, H.
N1 - Publisher Copyright: © 2015 Elsevier Ltd. Copyright: Copyright 2015 Elsevier B.V., All rights reserved.
PY - 2015/8
Y1 - 2015/8
N2 - Material movement between solder joints and their contact pads leads to the formation of intermetallic compounds at the contact surfaces. Concentration gradients are responsible for this material movement. The intermetallic compound growth during temperature storage and AC/DC electromigration tests on 12 × 12 mm Amkor® PoP with SnAg3.0Cu0.5 ball grid arrays including direct SnAgCu to Cu contacts at their bottom bumps was investigated. Based on the resulting increase in the IMC thickness the average mass flux of Cu and Sn were calculated. The activation energies (EA) diffusion constants (D0), effective charges (Z∗) and heats of transport (Q∗) are determined by measurement. With these parameters the mass fluxes due to concentration gradients, electromigration and thermomigration are calculated and the results were implemented in a routine for the dynamical calculation of the IMC-growth. Finally these calculations were validated by measurements.
AB - Material movement between solder joints and their contact pads leads to the formation of intermetallic compounds at the contact surfaces. Concentration gradients are responsible for this material movement. The intermetallic compound growth during temperature storage and AC/DC electromigration tests on 12 × 12 mm Amkor® PoP with SnAg3.0Cu0.5 ball grid arrays including direct SnAgCu to Cu contacts at their bottom bumps was investigated. Based on the resulting increase in the IMC thickness the average mass flux of Cu and Sn were calculated. The activation energies (EA) diffusion constants (D0), effective charges (Z∗) and heats of transport (Q∗) are determined by measurement. With these parameters the mass fluxes due to concentration gradients, electromigration and thermomigration are calculated and the results were implemented in a routine for the dynamical calculation of the IMC-growth. Finally these calculations were validated by measurements.
KW - IMC growth
KW - Migration
KW - Package on package
KW - Packaging and assembly
KW - Reliability
KW - Simulation
UR - http://www.scopus.com/inward/record.url?scp=84943450986&partnerID=8YFLogxK
U2 - 10.1016/j.microrel.2015.06.052
DO - 10.1016/j.microrel.2015.06.052
M3 - Article
AN - SCOPUS:84943450986
VL - 55
SP - 1832
EP - 1837
JO - Microelectronics reliability
JF - Microelectronics reliability
SN - 0026-2714
IS - 9-10
ER -