Details
| Original language | English |
|---|---|
| Article number | 07JE08 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 56 |
| Issue number | 7 |
| Publication status | Published - Jul 2017 |
Abstract
Controlling the resonant frequency of ultrasonic transducers is important to achieve the excellent performance of ultrasonic devices. The resonant frequency can be shifted by a nonlinear effect or by increasing the temperature under high-power operation. We propose a resonant frequency control method during the transducer's operation that enables the dynamic compensation of resonant frequency shifts. To realize this, a transducer with passive piezoelectric parts was fabricated. By controlling the electric boundary condition of the passive piezoelectric parts between short and open by utilizing a metal-oxide-semiconductor field-effect transistor (MOSFET), the stiffness was changed, thus modifying the resonant frequency. In both simulation and experiment, the resonant frequency was modified successfully by controlling the switching duty ratio of the MOSFET. Additionally, a system for exciting a transducer at a resonant state with a wide frequency band was demonstrated.
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In: Japanese Journal of Applied Physics, Vol. 56, No. 7, 07JE08, 07.2017.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Dynamic resonant frequency control of ultrasonic transducer for stabilizing resonant state in wide frequency band
AU - Yokozawa, Hiroki
AU - Twiefel, Jens
AU - Weinstein, Michael
AU - Morita, Takeshi
N1 - Publisher Copyright: © 2017 The Japan Society of Applied Physics. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2017/7
Y1 - 2017/7
N2 - Controlling the resonant frequency of ultrasonic transducers is important to achieve the excellent performance of ultrasonic devices. The resonant frequency can be shifted by a nonlinear effect or by increasing the temperature under high-power operation. We propose a resonant frequency control method during the transducer's operation that enables the dynamic compensation of resonant frequency shifts. To realize this, a transducer with passive piezoelectric parts was fabricated. By controlling the electric boundary condition of the passive piezoelectric parts between short and open by utilizing a metal-oxide-semiconductor field-effect transistor (MOSFET), the stiffness was changed, thus modifying the resonant frequency. In both simulation and experiment, the resonant frequency was modified successfully by controlling the switching duty ratio of the MOSFET. Additionally, a system for exciting a transducer at a resonant state with a wide frequency band was demonstrated.
AB - Controlling the resonant frequency of ultrasonic transducers is important to achieve the excellent performance of ultrasonic devices. The resonant frequency can be shifted by a nonlinear effect or by increasing the temperature under high-power operation. We propose a resonant frequency control method during the transducer's operation that enables the dynamic compensation of resonant frequency shifts. To realize this, a transducer with passive piezoelectric parts was fabricated. By controlling the electric boundary condition of the passive piezoelectric parts between short and open by utilizing a metal-oxide-semiconductor field-effect transistor (MOSFET), the stiffness was changed, thus modifying the resonant frequency. In both simulation and experiment, the resonant frequency was modified successfully by controlling the switching duty ratio of the MOSFET. Additionally, a system for exciting a transducer at a resonant state with a wide frequency band was demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=85025074023&partnerID=8YFLogxK
U2 - 10.7567/JJAP.56.07JE08
DO - 10.7567/JJAP.56.07JE08
M3 - Article
AN - SCOPUS:85025074023
VL - 56
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 7
M1 - 07JE08
ER -