Details
| Original language | English |
|---|---|
| Title of host publication | 2020 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (electronic) | 9789075815368 |
| ISBN (print) | 978-1-7281-9807-1 |
| Publication status | Published - 2020 |
| Event | 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe - Lyon, France Duration: 7 Sept 2020 → 11 Sept 2020 |
Abstract
In this paper, the dynamic characterization of a 1.2 kV SiC-MOSFET half bridge module is presented. At first, the switching behaviour of the MOSFET and its body diode is examined with a double pulse test, also targeting the evaluation of the used current sensing technologies. Afterwards, the soft-switching performance is investigated in a three-phase inverter configuration with a sine-wave output filter.
Keywords
- Current sensor, Double pulse test, Silicon Carbide (SiC), Soft switching, Wide bandgap devices
ASJC Scopus subject areas
- Energy(all)
- Energy Engineering and Power Technology
- Engineering(all)
- Electrical and Electronic Engineering
- Engineering(all)
- Safety, Risk, Reliability and Quality
- Mathematics(all)
- Control and Optimization
Cite this
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2020 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe. Institute of Electrical and Electronics Engineers Inc., 2020. 9215599.
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Dynamic Characterization of a SiC-MOSFET Half Bridge in Hard- And Soft-Switching and Investigation of Current Sensing Technologies
AU - Ebersberger, Janine
AU - Muller, Jan Kaspar
AU - Mertens, Axel
N1 - Funding Information: We would like to acknowledge the funding by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany’s Excellence Strategy EXC 2163/1 Sustainable and Energy-Efficient Aviation Project ID 390881007.
PY - 2020
Y1 - 2020
N2 - In this paper, the dynamic characterization of a 1.2 kV SiC-MOSFET half bridge module is presented. At first, the switching behaviour of the MOSFET and its body diode is examined with a double pulse test, also targeting the evaluation of the used current sensing technologies. Afterwards, the soft-switching performance is investigated in a three-phase inverter configuration with a sine-wave output filter.
AB - In this paper, the dynamic characterization of a 1.2 kV SiC-MOSFET half bridge module is presented. At first, the switching behaviour of the MOSFET and its body diode is examined with a double pulse test, also targeting the evaluation of the used current sensing technologies. Afterwards, the soft-switching performance is investigated in a three-phase inverter configuration with a sine-wave output filter.
KW - Current sensor
KW - Double pulse test
KW - Silicon Carbide (SiC)
KW - Soft switching
KW - Wide bandgap devices
UR - http://www.scopus.com/inward/record.url?scp=85094877782&partnerID=8YFLogxK
U2 - 10.23919/EPE20ECCEEurope43536.2020.9215599
DO - 10.23919/EPE20ECCEEurope43536.2020.9215599
M3 - Conference contribution
AN - SCOPUS:85094877782
SN - 978-1-7281-9807-1
BT - 2020 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe
Y2 - 7 September 2020 through 11 September 2020
ER -