Details
| Original language | English |
|---|---|
| Article number | 105001 |
| Journal | Semiconductor Science and Technology |
| Volume | 25 |
| Issue number | 10 |
| Publication status | Published - 9 Sept 2010 |
Abstract
Crystalline thin films of Gd2O3 of varying thicknesses were grown on 2 inch p-Si(1 0 0) wafers by H2O-assisted atomic layer deposition (ALD) using a homoleptic gadolinium tris-guanidinate precursor [Gd(iPr-Me2N-Guan)3]. The Gd 2O3 layers grown at 225 °C were polycrystalline with columnar growth morphology. The as-grown films were electrically characterized as a metal oxide semiconductor (MOS) capacitor and exhibited instability in the flat-band voltage. Upon subjection to post-deposition defect-passivation treatment, they exhibited promising electrical characteristics. More importantly, the vertical downscaling of Gd2O3 thin films through the H2O-assisted ALD process could be realized through the capacitance equivalent thickness versus physical thickness studies.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Materials Chemistry
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In: Semiconductor Science and Technology, Vol. 25, No. 10, 105001, 09.09.2010.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Downscaling of defect-passivated Gd2O3 thin films on p-Si(0 0 1) wafers grown by H2O-assisted atomic layer deposition
AU - Ranjith, R.
AU - Laha, A.
AU - Bugiel, E.
AU - Osten, H. J.
AU - Xu, K.
AU - Milanov, A. P.
AU - Devi, A.
PY - 2010/9/9
Y1 - 2010/9/9
N2 - Crystalline thin films of Gd2O3 of varying thicknesses were grown on 2 inch p-Si(1 0 0) wafers by H2O-assisted atomic layer deposition (ALD) using a homoleptic gadolinium tris-guanidinate precursor [Gd(iPr-Me2N-Guan)3]. The Gd 2O3 layers grown at 225 °C were polycrystalline with columnar growth morphology. The as-grown films were electrically characterized as a metal oxide semiconductor (MOS) capacitor and exhibited instability in the flat-band voltage. Upon subjection to post-deposition defect-passivation treatment, they exhibited promising electrical characteristics. More importantly, the vertical downscaling of Gd2O3 thin films through the H2O-assisted ALD process could be realized through the capacitance equivalent thickness versus physical thickness studies.
AB - Crystalline thin films of Gd2O3 of varying thicknesses were grown on 2 inch p-Si(1 0 0) wafers by H2O-assisted atomic layer deposition (ALD) using a homoleptic gadolinium tris-guanidinate precursor [Gd(iPr-Me2N-Guan)3]. The Gd 2O3 layers grown at 225 °C were polycrystalline with columnar growth morphology. The as-grown films were electrically characterized as a metal oxide semiconductor (MOS) capacitor and exhibited instability in the flat-band voltage. Upon subjection to post-deposition defect-passivation treatment, they exhibited promising electrical characteristics. More importantly, the vertical downscaling of Gd2O3 thin films through the H2O-assisted ALD process could be realized through the capacitance equivalent thickness versus physical thickness studies.
UR - http://www.scopus.com/inward/record.url?scp=78649949965&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/25/10/105001
DO - 10.1088/0268-1242/25/10/105001
M3 - Article
AN - SCOPUS:78649949965
VL - 25
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 10
M1 - 105001
ER -