Dopant diffusion in C-doped Si and SiGe: physical model and experimental verification

Research output: Contribution to journal › Conference article › Research › peer review

Authors

  • H. Ruecker
  • B. Heinemann
  • D. Bolze
  • D. Knoll
  • D. Krueger
  • R. Kurps
  • H. J. Osten
  • P. Schley
  • B. Tillack
  • P. Zaumseil

External Research Organisations

  • Leibniz Institute for High Performance Microelectronics (IHP)
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Details

Original languageEnglish
Pages (from-to)345-348
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1999
Externally publishedYes
Event1999 IEEE International Devices Meeting (IEDM) - Washington, United States
Duration: 5 Dec 1999 → 8 Dec 1999

Abstract

We show that B and P exhibit suppressed, and As and Sb enhanced diffusion in C-rich Si. This can be well described by coupled diffusion of C and Si point defects. We present a physical model for the impact of C on dopant diffusion in Si and SiGe and demonstrate its reliability in the context of device characteristics of heterojunction bipolar transistors, which constitute a most sensitive tests for dopant diffusion on the nm scale.

ASJC Scopus subject areas

Cite this

Dopant diffusion in C-doped Si and SiGe: physical model and experimental verification. / Ruecker, H.; Heinemann, B.; Bolze, D. et al.
In: Technical Digest - International Electron Devices Meeting, 1999, p. 345-348.

Research output: Contribution to journal › Conference article › Research › peer review

Ruecker, H, Heinemann, B, Bolze, D, Knoll, D, Krueger, D, Kurps, R, Osten, HJ, Schley, P, Tillack, B & Zaumseil, P 1999, 'Dopant diffusion in C-doped Si and SiGe: physical model and experimental verification', Technical Digest - International Electron Devices Meeting, pp. 345-348.
Ruecker, H., Heinemann, B., Bolze, D., Knoll, D., Krueger, D., Kurps, R., Osten, H. J., Schley, P., Tillack, B., & Zaumseil, P. (1999). Dopant diffusion in C-doped Si and SiGe: physical model and experimental verification. Technical Digest - International Electron Devices Meeting, 345-348.
Ruecker H, Heinemann B, Bolze D, Knoll D, Krueger D, Kurps R et al. Dopant diffusion in C-doped Si and SiGe: physical model and experimental verification. Technical Digest - International Electron Devices Meeting. 1999;345-348.
Ruecker, H. ; Heinemann, B. ; Bolze, D. et al. / Dopant diffusion in C-doped Si and SiGe : physical model and experimental verification. In: Technical Digest - International Electron Devices Meeting. 1999 ; pp. 345-348.
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abstract = "We show that B and P exhibit suppressed, and As and Sb enhanced diffusion in C-rich Si. This can be well described by coupled diffusion of C and Si point defects. We present a physical model for the impact of C on dopant diffusion in Si and SiGe and demonstrate its reliability in the context of device characteristics of heterojunction bipolar transistors, which constitute a most sensitive tests for dopant diffusion on the nm scale.",
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Download

TY - JOUR

T1 - Dopant diffusion in C-doped Si and SiGe

T2 - 1999 IEEE International Devices Meeting (IEDM)

AU - Ruecker, H.

AU - Heinemann, B.

AU - Bolze, D.

AU - Knoll, D.

AU - Krueger, D.

AU - Kurps, R.

AU - Osten, H. J.

AU - Schley, P.

AU - Tillack, B.

AU - Zaumseil, P.

PY - 1999

Y1 - 1999

N2 - We show that B and P exhibit suppressed, and As and Sb enhanced diffusion in C-rich Si. This can be well described by coupled diffusion of C and Si point defects. We present a physical model for the impact of C on dopant diffusion in Si and SiGe and demonstrate its reliability in the context of device characteristics of heterojunction bipolar transistors, which constitute a most sensitive tests for dopant diffusion on the nm scale.

AB - We show that B and P exhibit suppressed, and As and Sb enhanced diffusion in C-rich Si. This can be well described by coupled diffusion of C and Si point defects. We present a physical model for the impact of C on dopant diffusion in Si and SiGe and demonstrate its reliability in the context of device characteristics of heterojunction bipolar transistors, which constitute a most sensitive tests for dopant diffusion on the nm scale.

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M3 - Conference article

AN - SCOPUS:17044454277

SP - 345

EP - 348

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

Y2 - 5 December 1999 through 8 December 1999

ER -