Details
| Original language | English |
|---|---|
| Title of host publication | 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 1140-1142 |
| Number of pages | 3 |
| ISBN (electronic) | 9781509056057 |
| Publication status | Published - 2017 |
| Event | 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: 25 Jun 2017 → 30 Jun 2017 |
Abstract
Passivating junctions, like hole-collecting p-polycrystalline silicon/SiO x /crystalline silicon junctions, need a thermal activation to activate their excellent passivation and contact properties. Here, the diffusion of boron from the highly doped poly-Si layer into the Si is often considered to compromise the passivation quality. In contrast we show that at least a slight diffusion of boron into the crystalline silicon is present for optimized annealing conditions. We achieve low emitter saturation current densities of 11 fA/cm 2 for in situ p + doped polysilicon deposited by low pressure chemical vapor deposition. Furthermore, we show that the polysilicon layer and the in- diffused region within the substrate are electrically connected.
Keywords
- Diffusion, Junction formation, Low pressure chemical vapor deposition, Passivating contacts, Scanning electron microscopy
ASJC Scopus subject areas
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
Sustainable Development Goals
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2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1140-1142.
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Dopant diffusion from p + -poly-Si into c-Si during thermal annealing
AU - Krugener, Jan
AU - Larionova, Yevgeniya
AU - Tetzlaff, Dominic
AU - Wolpensinger, Bettina
AU - Reiter, Sina
AU - Turcu, Mircea
AU - Peibst, Robby
AU - Kahler, Jan Dirk
AU - Wietler, Tobias
N1 - Funding information: This work was supported by the German Federal Ministry for Economic Affairs and Energy (BMWi) under contract no. 0325702B. Furthermore we would like to thank Uwe Höhne, Guido Glowatzki, Bianca Gehring and Renate Winter for sample processing.
PY - 2017
Y1 - 2017
N2 - Passivating junctions, like hole-collecting p-polycrystalline silicon/SiO x /crystalline silicon junctions, need a thermal activation to activate their excellent passivation and contact properties. Here, the diffusion of boron from the highly doped poly-Si layer into the Si is often considered to compromise the passivation quality. In contrast we show that at least a slight diffusion of boron into the crystalline silicon is present for optimized annealing conditions. We achieve low emitter saturation current densities of 11 fA/cm 2 for in situ p + doped polysilicon deposited by low pressure chemical vapor deposition. Furthermore, we show that the polysilicon layer and the in- diffused region within the substrate are electrically connected.
AB - Passivating junctions, like hole-collecting p-polycrystalline silicon/SiO x /crystalline silicon junctions, need a thermal activation to activate their excellent passivation and contact properties. Here, the diffusion of boron from the highly doped poly-Si layer into the Si is often considered to compromise the passivation quality. In contrast we show that at least a slight diffusion of boron into the crystalline silicon is present for optimized annealing conditions. We achieve low emitter saturation current densities of 11 fA/cm 2 for in situ p + doped polysilicon deposited by low pressure chemical vapor deposition. Furthermore, we show that the polysilicon layer and the in- diffused region within the substrate are electrically connected.
KW - Diffusion
KW - Junction formation
KW - Low pressure chemical vapor deposition
KW - Passivating contacts
KW - Scanning electron microscopy
UR - http://www.scopus.com/inward/record.url?scp=85048490260&partnerID=8YFLogxK
U2 - 10.1109/pvsc.2017.8366566
DO - 10.1109/pvsc.2017.8366566
M3 - Conference contribution
AN - SCOPUS:85048490260
SP - 1140
EP - 1142
BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Y2 - 25 June 2017 through 30 June 2017
ER -