Details
| Original language | English |
|---|---|
| Pages (from-to) | 262-270 |
| Number of pages | 9 |
| Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
| Volume | 87 |
| Issue number | 3 |
| Early online date | 22 Oct 2001 |
| Publication status | Published - 19 Dec 2001 |
| Externally published | Yes |
Abstract
The incorporation of low concentrations of carbon (<1020 cm-3) into the SiGe region of a heterojunction bipolar transistor (HBT) can significantly suppress boron outdiffusion caused by subsequent processing steps. This effect can be described by coupled diffusion of carbon atoms and Si point defects. We discuss the increase in performance and process margins in SiGe heterojunction bipolar technology by adding carbon. SiGe:C HBTs demonstrate excellent static parameters, exceeding the performance of state-of-the-art SiGe HBTs. Carbon also enhances the high frequency performance, because it allows one to use a high B doping level in a very thin SiGe base layer without outdiffusion from SiGe, even if applying post-epitaxial implants and anneals. Finally, we demonstrate the first modular integration of SiGe:C HBTs into a 0.25 μm, epi-free, dual-gate CMOS platform.
Keywords
- Bipolar transistor, Carbon, Diffusion, Heterojunction, Implantation, Silicon/Germanium
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Mechanics of Materials
- Engineering(all)
- Mechanical Engineering
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 87, No. 3, 19.12.2001, p. 262-270.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Dopant diffusion control by adding carbon into Si and SiGe
T2 - Principles and device application
AU - Osten, H. J.
AU - Knoll, D.
AU - Rücker, H.
PY - 2001/12/19
Y1 - 2001/12/19
N2 - The incorporation of low concentrations of carbon (<1020 cm-3) into the SiGe region of a heterojunction bipolar transistor (HBT) can significantly suppress boron outdiffusion caused by subsequent processing steps. This effect can be described by coupled diffusion of carbon atoms and Si point defects. We discuss the increase in performance and process margins in SiGe heterojunction bipolar technology by adding carbon. SiGe:C HBTs demonstrate excellent static parameters, exceeding the performance of state-of-the-art SiGe HBTs. Carbon also enhances the high frequency performance, because it allows one to use a high B doping level in a very thin SiGe base layer without outdiffusion from SiGe, even if applying post-epitaxial implants and anneals. Finally, we demonstrate the first modular integration of SiGe:C HBTs into a 0.25 μm, epi-free, dual-gate CMOS platform.
AB - The incorporation of low concentrations of carbon (<1020 cm-3) into the SiGe region of a heterojunction bipolar transistor (HBT) can significantly suppress boron outdiffusion caused by subsequent processing steps. This effect can be described by coupled diffusion of carbon atoms and Si point defects. We discuss the increase in performance and process margins in SiGe heterojunction bipolar technology by adding carbon. SiGe:C HBTs demonstrate excellent static parameters, exceeding the performance of state-of-the-art SiGe HBTs. Carbon also enhances the high frequency performance, because it allows one to use a high B doping level in a very thin SiGe base layer without outdiffusion from SiGe, even if applying post-epitaxial implants and anneals. Finally, we demonstrate the first modular integration of SiGe:C HBTs into a 0.25 μm, epi-free, dual-gate CMOS platform.
KW - Bipolar transistor
KW - Carbon
KW - Diffusion
KW - Heterojunction
KW - Implantation
KW - Silicon/Germanium
UR - http://www.scopus.com/inward/record.url?scp=0035915297&partnerID=8YFLogxK
U2 - 10.1016/S0921-5107(01)00723-1
DO - 10.1016/S0921-5107(01)00723-1
M3 - Article
AN - SCOPUS:0035915297
VL - 87
SP - 262
EP - 270
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
SN - 0921-5107
IS - 3
ER -