Details
| Original language | English |
|---|---|
| Article number | 88 |
| Journal | Microsystems and Nanoengineering |
| Volume | 6 |
| Issue number | 1 |
| Publication status | Published - 1 Dec 2020 |
| Externally published | Yes |
Abstract
The rapid development of display technologies has raised interest in arrays of self-emitting, individually controlled light sources atthe microscale. Gallium nitride (GaN) micro-light-emitting diode (LED) technology meets this demand. However, the current technology is not suitable for the fabrication of arrays of submicron light sources that can be controlled individually. Our approach is based on nanoLED arrays that can directly address each array element and a self-pitch with dimensions below the wavelength of light. The design and fabrication processes are explained in detail and possess two geometries: a 6 × 6 array with 400 nm LEDs and a 2 × 32 line array with 200 nm LEDs. These nanoLEDs are developed as core elements of a novel on-chip super-resolution microscope. GaN technology, based on its physical properties, is an ideal platform for such nanoLEDs.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Materials Science(all)
- Materials Science (miscellaneous)
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Industrial and Manufacturing Engineering
- Engineering(all)
- Electrical and Electronic Engineering
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In: Microsystems and Nanoengineering, Vol. 6, No. 1, 88, 01.12.2020.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Directly addressable GaN-based nano-LED arrays: fabrication and electro-optical characterization
AU - Bezshlyakh, Daria D.
AU - Spende, Hendrik
AU - Weimann, Thomas
AU - Hinze, Peter
AU - Bornemann, Steffen
AU - Gülink, Jan
AU - Canals, Joan
AU - Prades, Joan Daniel
AU - Dieguez, Angel
AU - Waag, Andreas
N1 - Funding information: This work was funded by the European Union’s Horizon 2020 research and innovation program within the project of ChipScope under grant agreement no. 737089 and by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany’s Excellence Strategy—EXC-2123 QuantumFrontiers —390837967. The authors would like to thank C. Margenfeld and I. Manglano Clavero for sample growth in the epitaxy competence center (ec2) and A. Schmidt, J. Breitfelder, and A. Michalski for their technical support during the experiments. The authors gratefully acknowledge the support of the Braunschweig International Graduate School of Metrology B-IGSM and the DFG Research Training Group 1952 Metrology for Complex Nanosystems. J.D.P. acknowledges the support of the ICREA Academia Program, and the DFG Project GrKNanoMet.
PY - 2020/12/1
Y1 - 2020/12/1
N2 - The rapid development of display technologies has raised interest in arrays of self-emitting, individually controlled light sources atthe microscale. Gallium nitride (GaN) micro-light-emitting diode (LED) technology meets this demand. However, the current technology is not suitable for the fabrication of arrays of submicron light sources that can be controlled individually. Our approach is based on nanoLED arrays that can directly address each array element and a self-pitch with dimensions below the wavelength of light. The design and fabrication processes are explained in detail and possess two geometries: a 6 × 6 array with 400 nm LEDs and a 2 × 32 line array with 200 nm LEDs. These nanoLEDs are developed as core elements of a novel on-chip super-resolution microscope. GaN technology, based on its physical properties, is an ideal platform for such nanoLEDs.
AB - The rapid development of display technologies has raised interest in arrays of self-emitting, individually controlled light sources atthe microscale. Gallium nitride (GaN) micro-light-emitting diode (LED) technology meets this demand. However, the current technology is not suitable for the fabrication of arrays of submicron light sources that can be controlled individually. Our approach is based on nanoLED arrays that can directly address each array element and a self-pitch with dimensions below the wavelength of light. The design and fabrication processes are explained in detail and possess two geometries: a 6 × 6 array with 400 nm LEDs and a 2 × 32 line array with 200 nm LEDs. These nanoLEDs are developed as core elements of a novel on-chip super-resolution microscope. GaN technology, based on its physical properties, is an ideal platform for such nanoLEDs.
UR - http://www.scopus.com/inward/record.url?scp=85092759042&partnerID=8YFLogxK
U2 - 10.1038/s41378-020-00198-y
DO - 10.1038/s41378-020-00198-y
M3 - Article
AN - SCOPUS:85092759042
VL - 6
JO - Microsystems and Nanoengineering
JF - Microsystems and Nanoengineering
IS - 1
M1 - 88
ER -