Direct observation of the rotational direction of electron spin precession in semiconductors

Research output: Contribution to journalArticleResearchpeer review

Authors

  • Michael Oestreich
  • Daniel Hägele
  • H. C. Schneider
  • A. Knorr
  • A. Hansch
  • S. Hallstein
  • Klaus H. Schmidt
  • K. Köhler
  • Stephan W. Koch
  • W. W. Rühle

External Research Organisations

  • Philipps-Universität Marburg
  • Max Planck Institute for Solid State Research (MPI-FKF)
  • Ruhr-Universität Bochum
  • Fraunhofer Institute for Applied Solid State Physics (IAF)
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Details

Original languageEnglish
Pages (from-to)753-758
Number of pages6
JournalSolid State Communications
Volume108
Issue number10
Publication statusPublished - 5 Nov 1998
Externally publishedYes

Abstract

A new experimental method is presented to determine the sign of the electron Landé g factor in semiconductors by time-resolved magneto photoluminescence. This technique is used to demonstrate the reversal of the electron g factor for different material compositions. Measurements and theoretical estimates for the spin dynamics in quantum well systems are compared.

Keywords

    A. Semiconductors, D. Spin dynamics, E. Luminescence, E. Time-resolved optical spectroscopy

ASJC Scopus subject areas

Cite this

Direct observation of the rotational direction of electron spin precession in semiconductors. / Oestreich, Michael; Hägele, Daniel; Schneider, H. C. et al.
In: Solid State Communications, Vol. 108, No. 10, 05.11.1998, p. 753-758.

Research output: Contribution to journalArticleResearchpeer review

Oestreich, M, Hägele, D, Schneider, HC, Knorr, A, Hansch, A, Hallstein, S, Schmidt, KH, Köhler, K, Koch, SW & Rühle, WW 1998, 'Direct observation of the rotational direction of electron spin precession in semiconductors', Solid State Communications, vol. 108, no. 10, pp. 753-758. https://doi.org/10.1016/S0038-1098(98)00440-2
Oestreich, M., Hägele, D., Schneider, H. C., Knorr, A., Hansch, A., Hallstein, S., Schmidt, K. H., Köhler, K., Koch, S. W., & Rühle, W. W. (1998). Direct observation of the rotational direction of electron spin precession in semiconductors. Solid State Communications, 108(10), 753-758. https://doi.org/10.1016/S0038-1098(98)00440-2
Oestreich M, Hägele D, Schneider HC, Knorr A, Hansch A, Hallstein S et al. Direct observation of the rotational direction of electron spin precession in semiconductors. Solid State Communications. 1998 Nov 5;108(10):753-758. doi: 10.1016/S0038-1098(98)00440-2
Oestreich, Michael ; Hägele, Daniel ; Schneider, H. C. et al. / Direct observation of the rotational direction of electron spin precession in semiconductors. In: Solid State Communications. 1998 ; Vol. 108, No. 10. pp. 753-758.
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TY - JOUR

T1 - Direct observation of the rotational direction of electron spin precession in semiconductors

AU - Oestreich, Michael

AU - Hägele, Daniel

AU - Schneider, H. C.

AU - Knorr, A.

AU - Hansch, A.

AU - Hallstein, S.

AU - Schmidt, Klaus H.

AU - Köhler, K.

AU - Koch, Stephan W.

AU - Rühle, W. W.

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PY - 1998/11/5

Y1 - 1998/11/5

N2 - A new experimental method is presented to determine the sign of the electron Landé g factor in semiconductors by time-resolved magneto photoluminescence. This technique is used to demonstrate the reversal of the electron g factor for different material compositions. Measurements and theoretical estimates for the spin dynamics in quantum well systems are compared.

AB - A new experimental method is presented to determine the sign of the electron Landé g factor in semiconductors by time-resolved magneto photoluminescence. This technique is used to demonstrate the reversal of the electron g factor for different material compositions. Measurements and theoretical estimates for the spin dynamics in quantum well systems are compared.

KW - A. Semiconductors

KW - D. Spin dynamics

KW - E. Luminescence

KW - E. Time-resolved optical spectroscopy

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U2 - 10.1016/S0038-1098(98)00440-2

DO - 10.1016/S0038-1098(98)00440-2

M3 - Article

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VL - 108

SP - 753

EP - 758

JO - Solid State Communications

JF - Solid State Communications

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IS - 10

ER -

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