Details
| Original language | English |
|---|---|
| Article number | 6378387 |
| Pages (from-to) | 656-661 |
| Number of pages | 6 |
| Journal | IEEE journal of photovoltaics |
| Volume | 3 |
| Issue number | 2 |
| Publication status | Published - 2013 |
Abstract
We implement direct laser texturing (DiLaT) into small-area (2 × 2 cm2) passivated emitter and rear solar cells (PERC). On monocrystalline float-zone silicon (FZ-Si) wafers, we achieve an independently confirmed energy conversion efficiency of 19.9% that demonstrates the applicability of DiLaT to high-efficiency solar cells. Applying our DiLaT process to block-cast multicrystalline silicon (mc-Si) wafers, we achieve short-circuit current densities Jsc up to 39.3 mA/cm 2 and efficiencies up to 17.9%. The reduced Jsc value of our mc-Si solar cells compared with the FZ-Si cells is shown to be predominantly due to increased recombination in the bulk and/or the rear.
Keywords
- Laser, photovoltaic cells, silicon, surface texture
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
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In: IEEE journal of photovoltaics, Vol. 3, No. 2, 6378387, 2013, p. 656-661.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Direct laser texturing for high-efficiency silicon solar cells
AU - Zielke, Dimitri
AU - Sylla, David
AU - Neubert, Tobias
AU - Brendel, Rolf
AU - Schmidt, Jan
PY - 2013
Y1 - 2013
N2 - We implement direct laser texturing (DiLaT) into small-area (2 × 2 cm2) passivated emitter and rear solar cells (PERC). On monocrystalline float-zone silicon (FZ-Si) wafers, we achieve an independently confirmed energy conversion efficiency of 19.9% that demonstrates the applicability of DiLaT to high-efficiency solar cells. Applying our DiLaT process to block-cast multicrystalline silicon (mc-Si) wafers, we achieve short-circuit current densities Jsc up to 39.3 mA/cm 2 and efficiencies up to 17.9%. The reduced Jsc value of our mc-Si solar cells compared with the FZ-Si cells is shown to be predominantly due to increased recombination in the bulk and/or the rear.
AB - We implement direct laser texturing (DiLaT) into small-area (2 × 2 cm2) passivated emitter and rear solar cells (PERC). On monocrystalline float-zone silicon (FZ-Si) wafers, we achieve an independently confirmed energy conversion efficiency of 19.9% that demonstrates the applicability of DiLaT to high-efficiency solar cells. Applying our DiLaT process to block-cast multicrystalline silicon (mc-Si) wafers, we achieve short-circuit current densities Jsc up to 39.3 mA/cm 2 and efficiencies up to 17.9%. The reduced Jsc value of our mc-Si solar cells compared with the FZ-Si cells is shown to be predominantly due to increased recombination in the bulk and/or the rear.
KW - Laser
KW - photovoltaic cells
KW - silicon
KW - surface texture
UR - http://www.scopus.com/inward/record.url?scp=84875583432&partnerID=8YFLogxK
U2 - 10.1109/JPHOTOV.2012.2228302
DO - 10.1109/JPHOTOV.2012.2228302
M3 - Article
AN - SCOPUS:84875583432
VL - 3
SP - 656
EP - 661
JO - IEEE journal of photovoltaics
JF - IEEE journal of photovoltaics
SN - 2156-3381
IS - 2
M1 - 6378387
ER -