Direct evidence of tunneling between edge states across a gate-induced potential barrier

Research output: Contribution to journalArticleResearchpeer review

Authors

  • A. J. Peck
  • S. J. Bending
  • J. Weis
  • R. J. Haug
  • K. Von Klitzing
  • K. Ploog

External Research Organisations

  • Max Planck Institute for Solid State Research (MPI-FKF)
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Details

Original languageEnglish
Pages (from-to)4711-4714
Number of pages4
JournalPhysical Review B
Volume51
Issue number7
Publication statusPublished - 1 Jan 1995
Externally publishedYes

Abstract

We have studied tunneling in the plane of a two-dimensional electron gas across the imposed potential barrier beneath a very short gate. In quantizing magnetic fields the tunnel conductance shows sharp peaks as a function of applied bias, which vary nonmonotonically in position and amplitude as the field is increased, showing a clear switching behavior near integer filling factors. Our data show reasonable qualitative agreement with a theoretical single-particle model of tunneling between edge states and we propose that this is the origin of our peak structures.

ASJC Scopus subject areas

Cite this

Direct evidence of tunneling between edge states across a gate-induced potential barrier. / Peck, A. J.; Bending, S. J.; Weis, J. et al.
In: Physical Review B, Vol. 51, No. 7, 01.01.1995, p. 4711-4714.

Research output: Contribution to journalArticleResearchpeer review

Peck AJ, Bending SJ, Weis J, Haug RJ, Von Klitzing K, Ploog K. Direct evidence of tunneling between edge states across a gate-induced potential barrier. Physical Review B. 1995 Jan 1;51(7):4711-4714. doi: 10.1103/PhysRevB.51.4711
Peck, A. J. ; Bending, S. J. ; Weis, J. et al. / Direct evidence of tunneling between edge states across a gate-induced potential barrier. In: Physical Review B. 1995 ; Vol. 51, No. 7. pp. 4711-4714.
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