Details
| Original language | English |
|---|---|
| Title of host publication | Novel In-Plane Semiconductor Lasers |
| Subtitle of host publication | 21 - 23 January 2002, San Jose, USA |
| Place of Publication | Bellingham |
| Publisher | SPIE |
| Pages | 256-263 |
| Number of pages | 8 |
| Edition | 1 |
| ISBN (print) | 0-8194-4390-5 |
| Publication status | Published - 22 May 2002 |
| Externally published | Yes |
Publication series
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Publisher | SPIE |
| Volume | 4651 |
| ISSN (Print) | 0277-786X |
Abstract
Beam quality and output power of mostly 2-dimensional stacked diode laser systems are insufficient for the demands of materials processing. To increase the output power at almost constant beam-quality, superimposition of diode laser bars of different wavelengths as well as polarization-multiplexing of s- and p-polarized laser beams is possible. Different techniques for wavelength-multiplexing have been developed. The so-called multi-filter concept of a spanned coated etalon with edge-filters has turned out best. The concept features a modular design, simple adjustment and easy add-on of more wavelengths. Concerning the polarization-multiplexing we take advantage of the almost linear polarized diode laser bars. Ordinary used beam splitter cubes with a cemented structure are less qualified for high radiance. Hence the beam combination is achieved with beam displacers made of a birefringent crystal (YVO4) which provide high transmittance and convenient adaptation. Finally an experimental set-up with 8 diode laser bars of 4 different wavelengths, i.e. 8-times beam superimposition, is realized. The set-up called multiplexer obtains a radiance of about 4 × 106 W cm-2 sr-1 and outnumbers all other comparable high power diode laser systems.
Keywords
- Beam displacer, Birefringent crystal, High power diode laser, Multi-filter, Multiplexer, Polarization-multiplexing, Wavelength-multiplexing
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Computer Science(all)
- Computer Science Applications
- Mathematics(all)
- Applied Mathematics
- Engineering(all)
- Electrical and Electronic Engineering
Cite this
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Novel In-Plane Semiconductor Lasers: 21 - 23 January 2002, San Jose, USA. 1. ed. Bellingham: SPIE, 2002. p. 256-263 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 4651).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Diode laser modules of highest brilliance for materials processing
AU - Knitsch, Alexander
AU - Luft, Axel
AU - Groß, Tobias
AU - Ristau, Detlev
AU - Loosen, Peter
AU - Poprawe, Reinhart
PY - 2002/5/22
Y1 - 2002/5/22
N2 - Beam quality and output power of mostly 2-dimensional stacked diode laser systems are insufficient for the demands of materials processing. To increase the output power at almost constant beam-quality, superimposition of diode laser bars of different wavelengths as well as polarization-multiplexing of s- and p-polarized laser beams is possible. Different techniques for wavelength-multiplexing have been developed. The so-called multi-filter concept of a spanned coated etalon with edge-filters has turned out best. The concept features a modular design, simple adjustment and easy add-on of more wavelengths. Concerning the polarization-multiplexing we take advantage of the almost linear polarized diode laser bars. Ordinary used beam splitter cubes with a cemented structure are less qualified for high radiance. Hence the beam combination is achieved with beam displacers made of a birefringent crystal (YVO4) which provide high transmittance and convenient adaptation. Finally an experimental set-up with 8 diode laser bars of 4 different wavelengths, i.e. 8-times beam superimposition, is realized. The set-up called multiplexer obtains a radiance of about 4 × 106 W cm-2 sr-1 and outnumbers all other comparable high power diode laser systems.
AB - Beam quality and output power of mostly 2-dimensional stacked diode laser systems are insufficient for the demands of materials processing. To increase the output power at almost constant beam-quality, superimposition of diode laser bars of different wavelengths as well as polarization-multiplexing of s- and p-polarized laser beams is possible. Different techniques for wavelength-multiplexing have been developed. The so-called multi-filter concept of a spanned coated etalon with edge-filters has turned out best. The concept features a modular design, simple adjustment and easy add-on of more wavelengths. Concerning the polarization-multiplexing we take advantage of the almost linear polarized diode laser bars. Ordinary used beam splitter cubes with a cemented structure are less qualified for high radiance. Hence the beam combination is achieved with beam displacers made of a birefringent crystal (YVO4) which provide high transmittance and convenient adaptation. Finally an experimental set-up with 8 diode laser bars of 4 different wavelengths, i.e. 8-times beam superimposition, is realized. The set-up called multiplexer obtains a radiance of about 4 × 106 W cm-2 sr-1 and outnumbers all other comparable high power diode laser systems.
KW - Beam displacer
KW - Birefringent crystal
KW - High power diode laser
KW - Multi-filter
KW - Multiplexer
KW - Polarization-multiplexing
KW - Wavelength-multiplexing
UR - http://www.scopus.com/inward/record.url?scp=0036059258&partnerID=8YFLogxK
U2 - 10.1117/12.467954
DO - 10.1117/12.467954
M3 - Conference contribution
AN - SCOPUS:0036059258
SN - 0-8194-4390-5
T3 - Proceedings of SPIE - The International Society for Optical Engineering
SP - 256
EP - 263
BT - Novel In-Plane Semiconductor Lasers
PB - SPIE
CY - Bellingham
ER -