Details
| Original language | English |
|---|---|
| Pages (from-to) | 283-288 |
| Number of pages | 6 |
| Journal | Microelectronic engineering |
| Volume | 60 |
| Issue number | 1-2 |
| Early online date | 8 Dec 2001 |
| Publication status | Published - Jan 2002 |
| Externally published | Yes |
| Event | Materials for Advanced Metallization (MAM 2001) - Sigtuna, Sweden Duration: 5 Mar 2001 → 7 Mar 2001 |
Abstract
We investigate copper diffusion in Si-rich Si1-x-yGexCy (x<20%) and Ge-rich (x=93%) Si1-xGex layers. The profiles of the different constituents (Si, Ge, Cu, C, B) were determined using secondary ion mass spectroscopy (SIMS). Carrier profiles were studied by electrical characterizations of Schottky diodes. The structures were prepared by copper deposition on SiGeC alloys at room temperature. The increase of the Ge-content from 0% to 93% results in a decrease of the Cu diffusion depth determined by SIMS. C-incorporation also leads to a reduction of Cu-diffusion. The effect of boron seems to be more important, and Cu-diffusion is well retarded in p-type samples. The electrical activity of Cu in IV-IV alloys depends on the Ge-content. For Si-rich p-type SiGe alloy, we observed a passivation of the boron acceptors attributed to the formation of Cu-B pairs, which also explains the reduction of Cu diffusion. For p-type Ge-rich samples, the acceptor concentration can reach very high values (larger than the boron concentration), and becomes temperature dependent. These results show that boron passivation is no longer the most important effect of Cu diffusion. We suggest that the presence of Cu in Ge-rich alloys produces an acceptor-like trap.
Keywords
- Boron passivation, Cu, SiGeC, Trap
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Physics and Astronomy(all)
- Condensed Matter Physics
- Materials Science(all)
- Surfaces, Coatings and Films
- Engineering(all)
- Electrical and Electronic Engineering
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In: Microelectronic engineering, Vol. 60, No. 1-2, 01.2002, p. 283-288.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Diffusion and electrical activity of copper in Si1-x-yGexCy alloys
AU - Hattab, A.
AU - Aboelfotoh, M. O.
AU - Tremblay, G.
AU - Meyer, F.
AU - Kolodzey, J.
AU - Osten, H. J.
AU - Dubois, C.
PY - 2002/1
Y1 - 2002/1
N2 - We investigate copper diffusion in Si-rich Si1-x-yGexCy (x<20%) and Ge-rich (x=93%) Si1-xGex layers. The profiles of the different constituents (Si, Ge, Cu, C, B) were determined using secondary ion mass spectroscopy (SIMS). Carrier profiles were studied by electrical characterizations of Schottky diodes. The structures were prepared by copper deposition on SiGeC alloys at room temperature. The increase of the Ge-content from 0% to 93% results in a decrease of the Cu diffusion depth determined by SIMS. C-incorporation also leads to a reduction of Cu-diffusion. The effect of boron seems to be more important, and Cu-diffusion is well retarded in p-type samples. The electrical activity of Cu in IV-IV alloys depends on the Ge-content. For Si-rich p-type SiGe alloy, we observed a passivation of the boron acceptors attributed to the formation of Cu-B pairs, which also explains the reduction of Cu diffusion. For p-type Ge-rich samples, the acceptor concentration can reach very high values (larger than the boron concentration), and becomes temperature dependent. These results show that boron passivation is no longer the most important effect of Cu diffusion. We suggest that the presence of Cu in Ge-rich alloys produces an acceptor-like trap.
AB - We investigate copper diffusion in Si-rich Si1-x-yGexCy (x<20%) and Ge-rich (x=93%) Si1-xGex layers. The profiles of the different constituents (Si, Ge, Cu, C, B) were determined using secondary ion mass spectroscopy (SIMS). Carrier profiles were studied by electrical characterizations of Schottky diodes. The structures were prepared by copper deposition on SiGeC alloys at room temperature. The increase of the Ge-content from 0% to 93% results in a decrease of the Cu diffusion depth determined by SIMS. C-incorporation also leads to a reduction of Cu-diffusion. The effect of boron seems to be more important, and Cu-diffusion is well retarded in p-type samples. The electrical activity of Cu in IV-IV alloys depends on the Ge-content. For Si-rich p-type SiGe alloy, we observed a passivation of the boron acceptors attributed to the formation of Cu-B pairs, which also explains the reduction of Cu diffusion. For p-type Ge-rich samples, the acceptor concentration can reach very high values (larger than the boron concentration), and becomes temperature dependent. These results show that boron passivation is no longer the most important effect of Cu diffusion. We suggest that the presence of Cu in Ge-rich alloys produces an acceptor-like trap.
KW - Boron passivation
KW - Cu
KW - SiGeC
KW - Trap
UR - http://www.scopus.com/inward/record.url?scp=0036132992&partnerID=8YFLogxK
U2 - 10.1016/S0167-9317(01)00605-0
DO - 10.1016/S0167-9317(01)00605-0
M3 - Conference article
AN - SCOPUS:0036132992
VL - 60
SP - 283
EP - 288
JO - Microelectronic engineering
JF - Microelectronic engineering
SN - 0167-9317
IS - 1-2
T2 - Materials for Advanced Metallization (MAM 2001)
Y2 - 5 March 2001 through 7 March 2001
ER -