Details
Original language | English |
---|---|
Article number | 104516 |
Journal | Journal of applied physics |
Volume | 105 |
Issue number | 10 |
Early online date | 28 May 2009 |
Publication status | Published - 2009 |
Externally published | Yes |
Abstract
We present a method to determine the effective diffusion length L eff of silicon solar cells from photoluminescence (PL) measurements carried out under two different operating conditions. Measuring the photoluminescence emission under open circuit condition (PL-oc), where the solar cell is not contacted at all, and short circuit condition (PL-sc), where the solar cell is held at zero voltage, Leff directly follows from the ratio of the PL-oc and the PL-sc signals. Detailed knowledge about the optical properties of the experimental setup is not necessary since the optical properties cancel out completely. We explain the theoretical background of our method and derive an analytical description for the PL-oc and the PL-sc luminescence emissions. The applicability of our method is demonstrated by the comparison of effective diffusion lengths from PL measurements with values determined from the analysis of internal quantum efficiency measurements.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
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In: Journal of applied physics, Vol. 105, No. 10, 104516, 2009.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Determination of the effective diffusion length of silicon solar cells from photoluminescence
AU - Hinken, David
AU - Bothe, Karsten
AU - Ramspeck, Klaus
AU - Herlufsen, Sandra
AU - Brendel, Rolf
N1 - Funding Information: The authors would like to thank Bernhard Fischer for fruitful discussions. Many thanks go to Martin Wolf for carrying out spectral response measurements. This work was funded by the Federal Ministry for the Environment, Nature Conservation and Nuclear Safety under Contract No. 0327661.
PY - 2009
Y1 - 2009
N2 - We present a method to determine the effective diffusion length L eff of silicon solar cells from photoluminescence (PL) measurements carried out under two different operating conditions. Measuring the photoluminescence emission under open circuit condition (PL-oc), where the solar cell is not contacted at all, and short circuit condition (PL-sc), where the solar cell is held at zero voltage, Leff directly follows from the ratio of the PL-oc and the PL-sc signals. Detailed knowledge about the optical properties of the experimental setup is not necessary since the optical properties cancel out completely. We explain the theoretical background of our method and derive an analytical description for the PL-oc and the PL-sc luminescence emissions. The applicability of our method is demonstrated by the comparison of effective diffusion lengths from PL measurements with values determined from the analysis of internal quantum efficiency measurements.
AB - We present a method to determine the effective diffusion length L eff of silicon solar cells from photoluminescence (PL) measurements carried out under two different operating conditions. Measuring the photoluminescence emission under open circuit condition (PL-oc), where the solar cell is not contacted at all, and short circuit condition (PL-sc), where the solar cell is held at zero voltage, Leff directly follows from the ratio of the PL-oc and the PL-sc signals. Detailed knowledge about the optical properties of the experimental setup is not necessary since the optical properties cancel out completely. We explain the theoretical background of our method and derive an analytical description for the PL-oc and the PL-sc luminescence emissions. The applicability of our method is demonstrated by the comparison of effective diffusion lengths from PL measurements with values determined from the analysis of internal quantum efficiency measurements.
UR - http://www.scopus.com/inward/record.url?scp=66549116072&partnerID=8YFLogxK
U2 - 10.1063/1.3130408
DO - 10.1063/1.3130408
M3 - Article
AN - SCOPUS:66549116072
VL - 105
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 10
M1 - 104516
ER -