Details
| Original language | English |
|---|---|
| Pages (from-to) | 1393-1397 |
| Number of pages | 5 |
| Journal | Microelectronics reliability |
| Volume | 48 |
| Issue number | 8-9 |
| Publication status | Published - Aug 2008 |
Abstract
State-of-the-art migration calculations and mechanical simulations of interconnect structures are carried out under the assumption of one specific stress-free temperature for the structure. Finite element simulations of mechanical stress induced by the specific process temperatures of every process step are reported. But the connection between migration effects and process-induced stress was not investigated until now. In this paper, stress migration as well as electro- and thermomigration considering the process flow of the copper metallization will be determined and compared with simulations under fixed reference temperatures.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Engineering(all)
- Safety, Risk, Reliability and Quality
- Physics and Astronomy(all)
- Condensed Matter Physics
- Materials Science(all)
- Surfaces, Coatings and Films
- Engineering(all)
- Electrical and Electronic Engineering
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In: Microelectronics reliability, Vol. 48, No. 8-9, 08.2008, p. 1393-1397.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Determination of migration effects in Cu-via structures with respect to process-induced stress
AU - Weide-Zaage, Kirsten
AU - Zhao, Jiani
AU - Ciptokusumo, Joharsyah
AU - Aubel, Oliver
N1 - Funding Information: This work is supported by the Bundesministerium für Forschung und Technologie BMBF under SIMKON project Contract No. 01M3183A BMBF 523 PT-DLR. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2008/8
Y1 - 2008/8
N2 - State-of-the-art migration calculations and mechanical simulations of interconnect structures are carried out under the assumption of one specific stress-free temperature for the structure. Finite element simulations of mechanical stress induced by the specific process temperatures of every process step are reported. But the connection between migration effects and process-induced stress was not investigated until now. In this paper, stress migration as well as electro- and thermomigration considering the process flow of the copper metallization will be determined and compared with simulations under fixed reference temperatures.
AB - State-of-the-art migration calculations and mechanical simulations of interconnect structures are carried out under the assumption of one specific stress-free temperature for the structure. Finite element simulations of mechanical stress induced by the specific process temperatures of every process step are reported. But the connection between migration effects and process-induced stress was not investigated until now. In this paper, stress migration as well as electro- and thermomigration considering the process flow of the copper metallization will be determined and compared with simulations under fixed reference temperatures.
UR - http://www.scopus.com/inward/record.url?scp=50249128752&partnerID=8YFLogxK
U2 - 10.1016/j.microrel.2008.06.028
DO - 10.1016/j.microrel.2008.06.028
M3 - Article
AN - SCOPUS:50249128752
VL - 48
SP - 1393
EP - 1397
JO - Microelectronics reliability
JF - Microelectronics reliability
SN - 0026-2714
IS - 8-9
ER -