Details
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 12th European Microwave Integrated Circuits Conference |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 121-124 |
| Number of pages | 4 |
| ISBN (electronic) | 978-2-87487-048-4 |
| ISBN (print) | 978-1-5386-3966-5 |
| Publication status | Published - 21 Dec 2017 |
| Event | 12th European Microwave Integrated Circuits Conference, EuMIC 2017 - Nuremburg, Germany Duration: 9 Oct 2017 → 12 Oct 2017 |
Abstract
In this contribution a 44.5 dBm gallium nitride (GaN) based Doherty amplifier for a center frequency of 4900 MHz is presented. The developed Doherty amplifier uses an unsymmetrical power division and offset lines for optimization of the load modulation over the dynamic output range. Various drain supply voltages of the carrier and the peak amplifier are used to optimize the gain. Furthermore, the error vector magnitude (EVM) and the adjacent channel leakage ratio (ACLR) are reduced by using a memoryless digital predistortion (DPD) based on lookup table (LUT) model. All this design strategies improve the linearity of the Doherty amplifier.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Computer Science(all)
- Computer Networks and Communications
- Engineering(all)
- Electrical and Electronic Engineering
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Proceedings of the 12th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc., 2017. p. 121-124.
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Design of a Linearized and Efficient Doherty Amplifier for C-Band Applications
AU - Probst, Steffen
AU - Martinelli, Timo
AU - Seewald, Steffen
AU - Geck, Bernd
AU - Manteuffel, Dirk
N1 - Publisher Copyright: © 2017 European Microwave Association. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2017/12/21
Y1 - 2017/12/21
N2 - In this contribution a 44.5 dBm gallium nitride (GaN) based Doherty amplifier for a center frequency of 4900 MHz is presented. The developed Doherty amplifier uses an unsymmetrical power division and offset lines for optimization of the load modulation over the dynamic output range. Various drain supply voltages of the carrier and the peak amplifier are used to optimize the gain. Furthermore, the error vector magnitude (EVM) and the adjacent channel leakage ratio (ACLR) are reduced by using a memoryless digital predistortion (DPD) based on lookup table (LUT) model. All this design strategies improve the linearity of the Doherty amplifier.
AB - In this contribution a 44.5 dBm gallium nitride (GaN) based Doherty amplifier for a center frequency of 4900 MHz is presented. The developed Doherty amplifier uses an unsymmetrical power division and offset lines for optimization of the load modulation over the dynamic output range. Various drain supply voltages of the carrier and the peak amplifier are used to optimize the gain. Furthermore, the error vector magnitude (EVM) and the adjacent channel leakage ratio (ACLR) are reduced by using a memoryless digital predistortion (DPD) based on lookup table (LUT) model. All this design strategies improve the linearity of the Doherty amplifier.
UR - http://www.scopus.com/inward/record.url?scp=85045950094&partnerID=8YFLogxK
U2 - 10.23919/EuMIC.2017.8230675
DO - 10.23919/EuMIC.2017.8230675
M3 - Conference contribution
AN - SCOPUS:85045950094
SN - 978-1-5386-3966-5
SP - 121
EP - 124
BT - Proceedings of the 12th European Microwave Integrated Circuits Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 12th European Microwave Integrated Circuits Conference, EuMIC 2017
Y2 - 9 October 2017 through 12 October 2017
ER -