Details
| Original language | English |
|---|---|
| Pages (from-to) | 8042-8047 |
| Number of pages | 6 |
| Journal | Journal of applied physics |
| Volume | 76 |
| Issue number | 12 |
| Publication status | Published - 15 Dec 1994 |
| Externally published | Yes |
Abstract
The influence of molecular-beam-epitaxy growth conditions on the properties of five monolayers of germanium, embedded in a (001) silicon matrix for a conventional as well as an antimony-mediated growth in the temperature region from 300 to 450 °C, was investigated. The layers were analyzed by electroreflectance (ER), Raman spectroscopy, and transmission electron microscopy; they show compatible results for all three methods of investigation. For growth without antimony, a tendency toward segregation-induced alloying with increasing growth temperatures was observed. Antimony-mediated growth experiments show that the surfactant is able to improve the bulk character of the germanium layer at higher temperatures only, while it does not significantly influence the layer growth at lower temperatures. Among all investigated growth conditions the best sharpness of the germanium layer interface was found for the antimony-mediated growth at 450 °C. An annealing after growth at increasing temperatures increased the alloying by an interdiffusion of Si and Ge as indicated by Raman measurements. In ER a vanishing of the Ge-like transitions was observed after a treatment at temperatures between 600 and 700 °C for 15 min.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
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In: Journal of applied physics, Vol. 76, No. 12, 15.12.1994, p. 8042-8047.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Dependence of the interface sharpness of a Ge single quantum well on molecular-beam-epitaxial growth conditions
AU - Kissinger, W.
AU - Osten, H. J.
AU - Lippert, G.
AU - Dietrich, B.
AU - Bugiel, E.
PY - 1994/12/15
Y1 - 1994/12/15
N2 - The influence of molecular-beam-epitaxy growth conditions on the properties of five monolayers of germanium, embedded in a (001) silicon matrix for a conventional as well as an antimony-mediated growth in the temperature region from 300 to 450 °C, was investigated. The layers were analyzed by electroreflectance (ER), Raman spectroscopy, and transmission electron microscopy; they show compatible results for all three methods of investigation. For growth without antimony, a tendency toward segregation-induced alloying with increasing growth temperatures was observed. Antimony-mediated growth experiments show that the surfactant is able to improve the bulk character of the germanium layer at higher temperatures only, while it does not significantly influence the layer growth at lower temperatures. Among all investigated growth conditions the best sharpness of the germanium layer interface was found for the antimony-mediated growth at 450 °C. An annealing after growth at increasing temperatures increased the alloying by an interdiffusion of Si and Ge as indicated by Raman measurements. In ER a vanishing of the Ge-like transitions was observed after a treatment at temperatures between 600 and 700 °C for 15 min.
AB - The influence of molecular-beam-epitaxy growth conditions on the properties of five monolayers of germanium, embedded in a (001) silicon matrix for a conventional as well as an antimony-mediated growth in the temperature region from 300 to 450 °C, was investigated. The layers were analyzed by electroreflectance (ER), Raman spectroscopy, and transmission electron microscopy; they show compatible results for all three methods of investigation. For growth without antimony, a tendency toward segregation-induced alloying with increasing growth temperatures was observed. Antimony-mediated growth experiments show that the surfactant is able to improve the bulk character of the germanium layer at higher temperatures only, while it does not significantly influence the layer growth at lower temperatures. Among all investigated growth conditions the best sharpness of the germanium layer interface was found for the antimony-mediated growth at 450 °C. An annealing after growth at increasing temperatures increased the alloying by an interdiffusion of Si and Ge as indicated by Raman measurements. In ER a vanishing of the Ge-like transitions was observed after a treatment at temperatures between 600 and 700 °C for 15 min.
UR - http://www.scopus.com/inward/record.url?scp=36448999437&partnerID=8YFLogxK
U2 - 10.1063/1.357924
DO - 10.1063/1.357924
M3 - Article
AN - SCOPUS:36448999437
VL - 76
SP - 8042
EP - 8047
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 12
ER -