Details
| Original language | English |
|---|---|
| Pages (from-to) | 2617-2628 |
| Number of pages | 12 |
| Journal | Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties |
| Volume | 79 |
| Issue number | 11 |
| Publication status | Published - 1 Nov 1999 |
| Externally published | Yes |
Abstract
The effect of B and P doping on the crystallization kinetics of amorphous Si0.5Ge0.5films was studied by means of in-situ X-ray diffraction (XRD) and in- situ transmission electron microscopy (TEM). Amorphous Si0.5Ge0.5 films, doped and undoped, were deposited by the molecular beam method on SiO2/Si(001) substrates and annealed at temperatures between 500 and 600°C. The crystalline fraction in the films was evaluated by following the intensity of the (220) reflection, obtained by in-situ XRD, as a function of time. It is demonstrated that the crystallization kinetics follow the Avrami formalism. The overall activation energy of crystallization was found to be 3.49eV for P-doped (1020cm-3) Si0.5Ge0.5films. In addition, crystallization parameters such as the incubation time, the nucléation rate and the grain growth rate were determined directly by in-situ TEM. The activation energies for grain growth and for the overall transformation were found to be 2.7 and 2.4 eV respectively for undoped Si0.5Ge0.5films. The films which were highly doped with B and P showed higher crystallization rate than the undoped films did.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
- Materials Science(all)
- Metals and Alloys
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In: Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties, Vol. 79, No. 11, 01.11.1999, p. 2617-2628.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Crystallization of amorphous Si0.5Ge0.5 films studied by means of in-situ X-ray diffraction and in-situ transmission electron microscopy
AU - Edelman, F.
AU - Raz, T.
AU - Komem, Y.
AU - Zaumseil, P.
AU - Osten, H. J.
AU - Capitan, M.
PY - 1999/11/1
Y1 - 1999/11/1
N2 - The effect of B and P doping on the crystallization kinetics of amorphous Si0.5Ge0.5films was studied by means of in-situ X-ray diffraction (XRD) and in- situ transmission electron microscopy (TEM). Amorphous Si0.5Ge0.5 films, doped and undoped, were deposited by the molecular beam method on SiO2/Si(001) substrates and annealed at temperatures between 500 and 600°C. The crystalline fraction in the films was evaluated by following the intensity of the (220) reflection, obtained by in-situ XRD, as a function of time. It is demonstrated that the crystallization kinetics follow the Avrami formalism. The overall activation energy of crystallization was found to be 3.49eV for P-doped (1020cm-3) Si0.5Ge0.5films. In addition, crystallization parameters such as the incubation time, the nucléation rate and the grain growth rate were determined directly by in-situ TEM. The activation energies for grain growth and for the overall transformation were found to be 2.7 and 2.4 eV respectively for undoped Si0.5Ge0.5films. The films which were highly doped with B and P showed higher crystallization rate than the undoped films did.
AB - The effect of B and P doping on the crystallization kinetics of amorphous Si0.5Ge0.5films was studied by means of in-situ X-ray diffraction (XRD) and in- situ transmission electron microscopy (TEM). Amorphous Si0.5Ge0.5 films, doped and undoped, were deposited by the molecular beam method on SiO2/Si(001) substrates and annealed at temperatures between 500 and 600°C. The crystalline fraction in the films was evaluated by following the intensity of the (220) reflection, obtained by in-situ XRD, as a function of time. It is demonstrated that the crystallization kinetics follow the Avrami formalism. The overall activation energy of crystallization was found to be 3.49eV for P-doped (1020cm-3) Si0.5Ge0.5films. In addition, crystallization parameters such as the incubation time, the nucléation rate and the grain growth rate were determined directly by in-situ TEM. The activation energies for grain growth and for the overall transformation were found to be 2.7 and 2.4 eV respectively for undoped Si0.5Ge0.5films. The films which were highly doped with B and P showed higher crystallization rate than the undoped films did.
UR - http://www.scopus.com/inward/record.url?scp=0038929165&partnerID=8YFLogxK
U2 - 10.1080/01418619908212013
DO - 10.1080/01418619908212013
M3 - Article
AN - SCOPUS:0038929165
VL - 79
SP - 2617
EP - 2628
JO - Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
JF - Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
SN - 0141-8610
IS - 11
ER -