Crystalline ternary rare earth oxide with capacitance equivalent thickness below 1 nm for high-K application

Research output: Contribution to journal › Article › Research › peer review

Authors

  • Apurba Laha
  • E. Bugiel
  • H. J. Osten
  • A. Fissel

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Original languageEnglish
Article number172107
JournalApplied physics letters
Volume88
Issue number17
Early online date25 Apr 2006
Publication statusPublished - 25 Apr 2006

Abstract

Ternary neodymium-gadolinium oxide (NGO) thin films were grown epitaxially on Si(001) substrates using modified molecular beam epitaxy. The electrical properties of NGO thin films demonstrate that this ternary oxide could be one of the most promising candidates to replace the conventionally used Si O2 or Si Ox Ny in complementary metal oxide semiconductor devices. The films were characterized with various methods. The capacitance equivalent oxide thickness of 4.5 nm thin films extracted from capacitance-voltage (C-V) characteristics was 0.9 nm. For such films, leakage current density and the density of interface traps were 2.6× 10-4 A cm2 at ∫ Vg - VFBV ∫ =1 V and 1.4× 1012 cm2 eV-1, respectively.

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Crystalline ternary rare earth oxide with capacitance equivalent thickness below 1 nm for high-K application. / Laha, Apurba; Bugiel, E.; Osten, H. J. et al.
In: Applied physics letters, Vol. 88, No. 17, 172107, 25.04.2006.

Research output: Contribution to journal › Article › Research › peer review

Laha A, Bugiel E, Osten HJ, Fissel A. Crystalline ternary rare earth oxide with capacitance equivalent thickness below 1 nm for high-K application. Applied physics letters. 2006 Apr 25;88(17):172107. Epub 2006 Apr 25. doi: 10.1063/1.2198518, 10.1063/1.2354313
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abstract = "Ternary neodymium-gadolinium oxide (NGO) thin films were grown epitaxially on Si(001) substrates using modified molecular beam epitaxy. The electrical properties of NGO thin films demonstrate that this ternary oxide could be one of the most promising candidates to replace the conventionally used Si O2 or Si Ox Ny in complementary metal oxide semiconductor devices. The films were characterized with various methods. The capacitance equivalent oxide thickness of 4.5 nm thin films extracted from capacitance-voltage (C-V) characteristics was 0.9 nm. For such films, leakage current density and the density of interface traps were 2.6× 10-4 A cm2 at ∫ Vg - VFBV ∫ =1 V and 1.4× 1012 cm2 eV-1, respectively.",
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AU - Bugiel, E.

AU - Osten, H. J.

AU - Fissel, A.

N1 - Funding Information: This work was supported by the German Federal Ministry of Education and Research (BMBF) under the KrisMOS project (01M3142D). One of the authors (A.L.) would like to thank the Alexander von Humboldt Foundation for assigning a fellowship. The authors would also like to thank O. Kirfel for his excellent technical assistance.

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