Details
| Original language | English |
|---|---|
| Title of host publication | 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 |
| Publication status | Published - 2008 |
| Externally published | Yes |
| Event | 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States Duration: 11 May 2008 → 16 May 2008 |
Publication series
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Abstract
In this contribution it will demonstrated that Al2O3 films synthesized by plasma-assisted atomic layer deposition are a very interesting low temperature solution for the passivation of highly and lowly doped p-type c-Si and lightly doped n-type c-Si. From experiments it will be shown that the excellent surface passivation by Al2O3 can for a large part be attributed to a high fixed negative charge density in the film on the film-substrate interface. The implications of this high fixed negative charge density on the surface passivation of both n- and p-type c-Si will be addressed.
ASJC Scopus subject areas
- Engineering(all)
- Control and Systems Engineering
- Engineering(all)
- Industrial and Manufacturing Engineering
- Engineering(all)
- Electrical and Electronic Engineering
Cite this
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33rd IEEE Photovoltaic Specialists Conference, PVSC 2008. 2008. 4922635 (Conference Record of the IEEE Photovoltaic Specialists Conference).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Crystalline silicon surface passivation by the negative-charge-dielectric Al2O3
AU - Hoex, B.
AU - Schmidt, J.
AU - Van De Sanden, M. C.M.
AU - Kessels, W. M.M.
PY - 2008
Y1 - 2008
N2 - In this contribution it will demonstrated that Al2O3 films synthesized by plasma-assisted atomic layer deposition are a very interesting low temperature solution for the passivation of highly and lowly doped p-type c-Si and lightly doped n-type c-Si. From experiments it will be shown that the excellent surface passivation by Al2O3 can for a large part be attributed to a high fixed negative charge density in the film on the film-substrate interface. The implications of this high fixed negative charge density on the surface passivation of both n- and p-type c-Si will be addressed.
AB - In this contribution it will demonstrated that Al2O3 films synthesized by plasma-assisted atomic layer deposition are a very interesting low temperature solution for the passivation of highly and lowly doped p-type c-Si and lightly doped n-type c-Si. From experiments it will be shown that the excellent surface passivation by Al2O3 can for a large part be attributed to a high fixed negative charge density in the film on the film-substrate interface. The implications of this high fixed negative charge density on the surface passivation of both n- and p-type c-Si will be addressed.
UR - http://www.scopus.com/inward/record.url?scp=84879722675&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2008.4922635
DO - 10.1109/PVSC.2008.4922635
M3 - Conference contribution
AN - SCOPUS:84879722675
SN - 9781424416417
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
BT - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
T2 - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
Y2 - 11 May 2008 through 16 May 2008
ER -