Details
| Original language | English |
|---|---|
| Pages (from-to) | 287-297 |
| Number of pages | 11 |
| Journal | ECS Transactions |
| Volume | 11 |
| Issue number | 4 |
| Publication status | Published - 2007 |
| Event | 5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States Duration: 8 Oct 2007 → 10 Oct 2007 |
Abstract
We present results for crystalline gadolinium oxides on silicon in the cubic bixbyite structure grown by solid source molecular beam epitaxy. Additional oxygen supply during growth improves the dielectric properties significantly, Experimental results for Gd2O3-based MOS capacitors grown under optimized conditions show that these layers are excellent candidates for application as very thin high-κ materials replacing SiO2 in future MOS devices, Epitaxial growth of lanthanide oxides on silicon without any interfacial layer has the advantage of enabling defined interfaces engineering. We will show that the electrical properties of epitaxial Gd2O3 thin films on Si substrates can further be improved significantly by an atomic control of interfacial structures due to a proper treatment of silicon surface prior to the oxide growth.
ASJC Scopus subject areas
- Engineering(all)
- General Engineering
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In: ECS Transactions, Vol. 11, No. 4, 2007, p. 287-297.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Crystalline Rare-Earth Oxides as High-κ Materials for Future CMOS Technologies
AU - Osten, H. J.
AU - Laha, A.
AU - Czemohorsky, M.
AU - Dargis, R.
AU - Bugiei, E.
AU - Fissel, A.
N1 - Acknowledgments: This work was supported by the German Federal Ministry of Education and Research (BMBF) under the MEGAEPOS project. One of the authors (AL) would like to thank the Alexander von Humboldt Foundation for assigning a fellowship.
PY - 2007
Y1 - 2007
N2 - We present results for crystalline gadolinium oxides on silicon in the cubic bixbyite structure grown by solid source molecular beam epitaxy. Additional oxygen supply during growth improves the dielectric properties significantly, Experimental results for Gd2O3-based MOS capacitors grown under optimized conditions show that these layers are excellent candidates for application as very thin high-κ materials replacing SiO2 in future MOS devices, Epitaxial growth of lanthanide oxides on silicon without any interfacial layer has the advantage of enabling defined interfaces engineering. We will show that the electrical properties of epitaxial Gd2O3 thin films on Si substrates can further be improved significantly by an atomic control of interfacial structures due to a proper treatment of silicon surface prior to the oxide growth.
AB - We present results for crystalline gadolinium oxides on silicon in the cubic bixbyite structure grown by solid source molecular beam epitaxy. Additional oxygen supply during growth improves the dielectric properties significantly, Experimental results for Gd2O3-based MOS capacitors grown under optimized conditions show that these layers are excellent candidates for application as very thin high-κ materials replacing SiO2 in future MOS devices, Epitaxial growth of lanthanide oxides on silicon without any interfacial layer has the advantage of enabling defined interfaces engineering. We will show that the electrical properties of epitaxial Gd2O3 thin films on Si substrates can further be improved significantly by an atomic control of interfacial structures due to a proper treatment of silicon surface prior to the oxide growth.
UR - http://www.scopus.com/inward/record.url?scp=45249111147&partnerID=8YFLogxK
U2 - 10.1149/1.2779568
DO - 10.1149/1.2779568
M3 - Conference article
AN - SCOPUS:45249111147
VL - 11
SP - 287
EP - 297
JO - ECS Transactions
JF - ECS Transactions
SN - 1938-5862
IS - 4
T2 - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
Y2 - 8 October 2007 through 10 October 2007
ER -