Details
| Original language | English |
|---|---|
| Title of host publication | Physics and Technology of High-k Materials 8 |
| Publisher | Electrochemical Society, Inc. |
| Pages | 25-29 |
| Number of pages | 5 |
| Edition | 3 |
| ISBN (electronic) | 9781607681724 |
| ISBN (print) | 9781566778220 |
| Publication status | Published - 2010 |
Publication series
| Name | ECS Transactions |
|---|---|
| Number | 3 |
| Volume | 33 |
| ISSN (Print) | 1938-5862 |
| ISSN (electronic) | 1938-6737 |
Abstract
In this work, epitaxial grown gadolinium oxide (Gd2O 3) has been investigated as promising high-k gate dielectric for future CMOS generations. Fully functional metal gate MOS capacitors and MOS field effect transistors (MOSFETs) on p- and n-type silicon substrates with titanium nitride (TiN) gate electrode have been fabricated in a gentle gate-last process and are electrically characterized in detail.
ASJC Scopus subject areas
- Engineering(all)
- General Engineering
Cite this
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Physics and Technology of High-k Materials 8. 3. ed. Electrochemical Society, Inc., 2010. p. 25-29 (ECS Transactions; Vol. 33, No. 3).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Crystalline Gadolinium Oxide
T2 - A Promising High-k Candidate for Future CMOS Generations
AU - Endres, R.
AU - Gottlob, H. D.B.
AU - Schmidt, M.
AU - Schwendt, D.
AU - Osten, H. J.
AU - Schwalke, U.
PY - 2010
Y1 - 2010
N2 - In this work, epitaxial grown gadolinium oxide (Gd2O 3) has been investigated as promising high-k gate dielectric for future CMOS generations. Fully functional metal gate MOS capacitors and MOS field effect transistors (MOSFETs) on p- and n-type silicon substrates with titanium nitride (TiN) gate electrode have been fabricated in a gentle gate-last process and are electrically characterized in detail.
AB - In this work, epitaxial grown gadolinium oxide (Gd2O 3) has been investigated as promising high-k gate dielectric for future CMOS generations. Fully functional metal gate MOS capacitors and MOS field effect transistors (MOSFETs) on p- and n-type silicon substrates with titanium nitride (TiN) gate electrode have been fabricated in a gentle gate-last process and are electrically characterized in detail.
UR - http://www.scopus.com/inward/record.url?scp=79952654651&partnerID=8YFLogxK
U2 - 10.1149/1.3481588
DO - 10.1149/1.3481588
M3 - Conference contribution
AN - SCOPUS:79952654651
SN - 9781566778220
T3 - ECS Transactions
SP - 25
EP - 29
BT - Physics and Technology of High-k Materials 8
PB - Electrochemical Society, Inc.
ER -