Details
| Original language | English |
|---|---|
| Pages (from-to) | 39-48 |
| Number of pages | 10 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 3950 |
| Publication status | Published - 2000 |
| Event | Optoelectronic Integrated Circuits IV - San Jose, CA, USA Duration: 26 Jan 2000 → 27 Jan 2000 |
Abstract
This paper describe the limits for the efficiency of integrated photodiode arrays in a standard CMOS-process. It shows that an efficiency of more than 60% is not possible for wideband incident light. The efficiency depends on the area of the diodes, the distance between the diodes and the depth of the diode junction. The resulting efficiency of integrated photodiodes in a 0.8 μm-CMOS-process is shown. For these photodiodes two ways of crosstalk reduction between photodiodes arranged in a line or a 2-D array are introduced. Injecting a substrate current between the diodes, the cross-talk can be reduced in a controlled way by the magnitude of the current. Another possibility is to embed every diode in a separate well. The advantages and disadvantages of both systems are discussed. Finally, an application of integrated photodiodes in an edge detector IC is presented. This 6 mm2 circuit has been manufactured in a 0.8 μm process using embedded photodiodes for crosstalk reduction. The circuit performs a position measurement of a shade edge or contrast edge imaged onto its photodiode array. With its all-analog signal processing, even semitransparent media can be detected without precision tradeoffs.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Computer Science(all)
- Computer Science Applications
- Mathematics(all)
- Applied Mathematics
- Engineering(all)
- Electrical and Electronic Engineering
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In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3950, 2000, p. 39-48.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Cross-talk reduction and efficiency of integrated photodiodes shown by an integrated edge detector
AU - Martiny, Ingo
AU - Leuner, Ruediger
AU - Wicht, Bernhard
N1 - Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.
PY - 2000
Y1 - 2000
N2 - This paper describe the limits for the efficiency of integrated photodiode arrays in a standard CMOS-process. It shows that an efficiency of more than 60% is not possible for wideband incident light. The efficiency depends on the area of the diodes, the distance between the diodes and the depth of the diode junction. The resulting efficiency of integrated photodiodes in a 0.8 μm-CMOS-process is shown. For these photodiodes two ways of crosstalk reduction between photodiodes arranged in a line or a 2-D array are introduced. Injecting a substrate current between the diodes, the cross-talk can be reduced in a controlled way by the magnitude of the current. Another possibility is to embed every diode in a separate well. The advantages and disadvantages of both systems are discussed. Finally, an application of integrated photodiodes in an edge detector IC is presented. This 6 mm2 circuit has been manufactured in a 0.8 μm process using embedded photodiodes for crosstalk reduction. The circuit performs a position measurement of a shade edge or contrast edge imaged onto its photodiode array. With its all-analog signal processing, even semitransparent media can be detected without precision tradeoffs.
AB - This paper describe the limits for the efficiency of integrated photodiode arrays in a standard CMOS-process. It shows that an efficiency of more than 60% is not possible for wideband incident light. The efficiency depends on the area of the diodes, the distance between the diodes and the depth of the diode junction. The resulting efficiency of integrated photodiodes in a 0.8 μm-CMOS-process is shown. For these photodiodes two ways of crosstalk reduction between photodiodes arranged in a line or a 2-D array are introduced. Injecting a substrate current between the diodes, the cross-talk can be reduced in a controlled way by the magnitude of the current. Another possibility is to embed every diode in a separate well. The advantages and disadvantages of both systems are discussed. Finally, an application of integrated photodiodes in an edge detector IC is presented. This 6 mm2 circuit has been manufactured in a 0.8 μm process using embedded photodiodes for crosstalk reduction. The circuit performs a position measurement of a shade edge or contrast edge imaged onto its photodiode array. With its all-analog signal processing, even semitransparent media can be detected without precision tradeoffs.
UR - http://www.scopus.com/inward/record.url?scp=0033729452&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0033729452
VL - 3950
SP - 39
EP - 48
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
SN - 0277-786X
T2 - Optoelectronic Integrated Circuits IV
Y2 - 26 January 2000 through 27 January 2000
ER -