Details
| Original language | English |
|---|---|
| Pages (from-to) | 523-528 |
| Number of pages | 6 |
| Journal | Solid State Phenomena |
| Volume | 47-48 |
| Publication status | Published - 1996 |
| Externally published | Yes |
Abstract
Spectroscopic ellipsometry (SE) and electroreflectance spectroscopy (ER) measurements in the energy range of direct transitions yield information about the bandstructure. We applied both techniques to investigate the effect of carbon on the critical points of Si1-yCy layers grown pseudomorphically on Si(001) for 0≤y≤0.012 in the energy range between 3 and 5 eV. The critical point energies for the E0, E1 and E2 transitions were determined by fitting experimental ER and SE spectra. The results of both techniques are compared. The critical point energy E1 , obtained by fitting the line shape of the second derivative of the dielectric function measured by SE, increases with higher carbon content whereas the E2 critical point energy decreases. ER measurements show the same tendency, but can resolve also the E0 transition that decreases slightly for higher carbon contents. The line broadening of the Si1-yCy layers depends much stronger on the fraction of alloying atoms compared to the Si1-xGex system.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Solid State Phenomena, Vol. 47-48, 1996, p. 523-528.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Critical points of strained Si1-yCy layers on Si(001)
AU - Kissinger, W.
AU - Weidner, M.
AU - Osten, H. J.
AU - Eichler, M.
PY - 1996
Y1 - 1996
N2 - Spectroscopic ellipsometry (SE) and electroreflectance spectroscopy (ER) measurements in the energy range of direct transitions yield information about the bandstructure. We applied both techniques to investigate the effect of carbon on the critical points of Si1-yCy layers grown pseudomorphically on Si(001) for 0≤y≤0.012 in the energy range between 3 and 5 eV. The critical point energies for the E0, E1 and E2 transitions were determined by fitting experimental ER and SE spectra. The results of both techniques are compared. The critical point energy E1 , obtained by fitting the line shape of the second derivative of the dielectric function measured by SE, increases with higher carbon content whereas the E2 critical point energy decreases. ER measurements show the same tendency, but can resolve also the E0 transition that decreases slightly for higher carbon contents. The line broadening of the Si1-yCy layers depends much stronger on the fraction of alloying atoms compared to the Si1-xGex system.
AB - Spectroscopic ellipsometry (SE) and electroreflectance spectroscopy (ER) measurements in the energy range of direct transitions yield information about the bandstructure. We applied both techniques to investigate the effect of carbon on the critical points of Si1-yCy layers grown pseudomorphically on Si(001) for 0≤y≤0.012 in the energy range between 3 and 5 eV. The critical point energies for the E0, E1 and E2 transitions were determined by fitting experimental ER and SE spectra. The results of both techniques are compared. The critical point energy E1 , obtained by fitting the line shape of the second derivative of the dielectric function measured by SE, increases with higher carbon content whereas the E2 critical point energy decreases. ER measurements show the same tendency, but can resolve also the E0 transition that decreases slightly for higher carbon contents. The line broadening of the Si1-yCy layers depends much stronger on the fraction of alloying atoms compared to the Si1-xGex system.
UR - http://www.scopus.com/inward/record.url?scp=17544371809&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:17544371809
VL - 47-48
SP - 523
EP - 528
JO - Solid State Phenomena
JF - Solid State Phenomena
SN - 1012-0394
ER -