Details
| Original language | English |
|---|---|
| Pages (from-to) | 166-169 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 5 |
| Issue number | 1 |
| Publication status | Published - 1 Jul 2008 |
| Event | 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, HCIS15 - Tokyo, Japan Duration: 23 Jul 2007 → 27 Jul 2007 |
Abstract
The recent observation of super-Poissonian shot noise in the tunneling current through two layers of selfassembled quantum dots is analyzed and discussed in terms of a sequential tunneling model for a single weakly coupled quantum dot stack. We demonstrate that the phenomenon of bunching in the electron transfer can be explained by the sole effect of Coulomb interaction between electrons inside the stack.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 5, No. 1, 01.07.2008, p. 166-169.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Coulomb-mediated electron bunching in tunneling through coupled quantum dots
AU - Kiesslich, G.
AU - Schöll, E.
AU - Hohls, F.
AU - Haug, R. J.
PY - 2008/7/1
Y1 - 2008/7/1
N2 - The recent observation of super-Poissonian shot noise in the tunneling current through two layers of selfassembled quantum dots is analyzed and discussed in terms of a sequential tunneling model for a single weakly coupled quantum dot stack. We demonstrate that the phenomenon of bunching in the electron transfer can be explained by the sole effect of Coulomb interaction between electrons inside the stack.
AB - The recent observation of super-Poissonian shot noise in the tunneling current through two layers of selfassembled quantum dots is analyzed and discussed in terms of a sequential tunneling model for a single weakly coupled quantum dot stack. We demonstrate that the phenomenon of bunching in the electron transfer can be explained by the sole effect of Coulomb interaction between electrons inside the stack.
UR - http://www.scopus.com/inward/record.url?scp=45849140139&partnerID=8YFLogxK
U2 - 10.1002/pssc.200776502
DO - 10.1002/pssc.200776502
M3 - Conference article
AN - SCOPUS:45849140139
VL - 5
SP - 166
EP - 169
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - 1
T2 - 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, HCIS15
Y2 - 23 July 2007 through 27 July 2007
ER -