Details
| Original language | English |
|---|---|
| Article number | 115304 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 80 |
| Issue number | 11 |
| Publication status | Published - 4 Sept 2009 |
Abstract
Single and double barrier structures have been realized with Ag nanostructures grown on Si(111) in combination with scanning tunneling microscopy. The series connection of a Schottky (SB) and tunneling barrier mimics a double barrier structure showing Coulomb blockade oscillations as revealed by scanning tunneling spectroscopy (STS). Although the SB remains in presence of a Ag3×3 reconstruction, the dI/dV characteristic turns into a single barrier structure. The Ag reconstruction provides a sufficiently high electron mobility capturing intrinsic defects which shortens the resistance of the SB. These results show that vertical transport properties, as measured with STS, are not only controlled by the structure and the bonding on the atomic scale, but depend strongly on the lateral properties of the interface as well.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physical Review B - Condensed Matter and Materials Physics, Vol. 80, No. 11, 115304, 04.09.2009.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Coulomb blockade effects in Ag/Si(111)
T2 - The role of the wetting layer
AU - Schmeidel, Jedrzej
AU - Pfnür, Herbert
AU - Tegenkamp, Christoph
PY - 2009/9/4
Y1 - 2009/9/4
N2 - Single and double barrier structures have been realized with Ag nanostructures grown on Si(111) in combination with scanning tunneling microscopy. The series connection of a Schottky (SB) and tunneling barrier mimics a double barrier structure showing Coulomb blockade oscillations as revealed by scanning tunneling spectroscopy (STS). Although the SB remains in presence of a Ag3×3 reconstruction, the dI/dV characteristic turns into a single barrier structure. The Ag reconstruction provides a sufficiently high electron mobility capturing intrinsic defects which shortens the resistance of the SB. These results show that vertical transport properties, as measured with STS, are not only controlled by the structure and the bonding on the atomic scale, but depend strongly on the lateral properties of the interface as well.
AB - Single and double barrier structures have been realized with Ag nanostructures grown on Si(111) in combination with scanning tunneling microscopy. The series connection of a Schottky (SB) and tunneling barrier mimics a double barrier structure showing Coulomb blockade oscillations as revealed by scanning tunneling spectroscopy (STS). Although the SB remains in presence of a Ag3×3 reconstruction, the dI/dV characteristic turns into a single barrier structure. The Ag reconstruction provides a sufficiently high electron mobility capturing intrinsic defects which shortens the resistance of the SB. These results show that vertical transport properties, as measured with STS, are not only controlled by the structure and the bonding on the atomic scale, but depend strongly on the lateral properties of the interface as well.
UR - http://www.scopus.com/inward/record.url?scp=70350593598&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.80.115304
DO - 10.1103/PhysRevB.80.115304
M3 - Article
AN - SCOPUS:70350593598
VL - 80
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 1098-0121
IS - 11
M1 - 115304
ER -