Details
| Original language | English |
|---|---|
| Article number | 155314 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 64 |
| Issue number | 15 |
| Early online date | 19 Sept 2001 |
| Publication status | Published - Oct 2001 |
Abstract
Measurements of resonant tunneling through a localized impurity state are used to probe fluctuations in the local density of states of heavily doped GaAs. The measured differential conductance is analyzed in terms of correlation functions with respect to voltage. A qualitative picture based on the scaling theory of Thouless is developed to relate the observed fluctuations to the statistics of single-particle wave functions. In a quantitative theory correlation functions are calculated. By comparing the experimental and theoretical correlation functions, the effective dimensionality of the emitter is analyzed and the dependence of the inelastic lifetime on energy is extracted.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physical Review B - Condensed Matter and Materials Physics, Vol. 64, No. 15, 155314, 10.2001.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Correlation-function spectroscopy of inelastic lifetime in heavily doped GaAs heterostructures
AU - Könemann, J.
AU - König, P.
AU - Schmidt, T.
AU - McCann, E.
AU - Fal’ko, Vladimir I.
AU - Haug, R. J.
PY - 2001/10
Y1 - 2001/10
N2 - Measurements of resonant tunneling through a localized impurity state are used to probe fluctuations in the local density of states of heavily doped GaAs. The measured differential conductance is analyzed in terms of correlation functions with respect to voltage. A qualitative picture based on the scaling theory of Thouless is developed to relate the observed fluctuations to the statistics of single-particle wave functions. In a quantitative theory correlation functions are calculated. By comparing the experimental and theoretical correlation functions, the effective dimensionality of the emitter is analyzed and the dependence of the inelastic lifetime on energy is extracted.
AB - Measurements of resonant tunneling through a localized impurity state are used to probe fluctuations in the local density of states of heavily doped GaAs. The measured differential conductance is analyzed in terms of correlation functions with respect to voltage. A qualitative picture based on the scaling theory of Thouless is developed to relate the observed fluctuations to the statistics of single-particle wave functions. In a quantitative theory correlation functions are calculated. By comparing the experimental and theoretical correlation functions, the effective dimensionality of the emitter is analyzed and the dependence of the inelastic lifetime on energy is extracted.
UR - http://www.scopus.com/inward/record.url?scp=0035887129&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.64.155314
DO - 10.1103/PhysRevB.64.155314
M3 - Article
AN - SCOPUS:0035887129
VL - 64
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 0163-1829
IS - 15
M1 - 155314
ER -