Details
| Original language | English |
|---|---|
| Title of host publication | 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 2334-2337 |
| Number of pages | 4 |
| ISBN (electronic) | 9781728104942 |
| Publication status | Published - Jun 2019 |
| Event | 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019 |
Publication series
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Abstract
Contacts to crystalline silicon (c-Si) based on ultrathin layers of silicon oxide (SiOy) and titanium oxide (TiOx) have recently been shown to be highly selective to electrons if aluminum (Al) is used as top metal. Such SiOy/TiOx/Al electron- selective rear contacts result in an excellent passivation and a low contact resistance (and hence an excellent selectivity) after annealing at 350°C, whereas before annealing very high contact resistances are measured combined with a poor surface passivation. In this contribution, we examine the SiO/TiOx/Al stack as implemented at the rear of our solar cells using Transmission Electron Microscopy (TEM)-based techniques and correlate electronic properties, deduced from measurements performed on solar cells, with the structural and compositional properties of the SiOy/TiOx/Al layer stack. We show that during annealing at 350°C, a significant interdiffusion mainly affecting the aluminum and to a lesser extend the oxygen and silicon distribution takes place within the layer stack, which seems to be the decisive prerequisite for the excellent electron conduction of the stack after annealing.
Keywords
- atomic layer deposition, electron-selective contact, silicon solar cell, SiO/TiO/Al stack, titanium oxide, transmission electronic microscopy
ASJC Scopus subject areas
- Engineering(all)
- Control and Systems Engineering
- Engineering(all)
- Industrial and Manufacturing Engineering
- Engineering(all)
- Electrical and Electronic Engineering
Cite this
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2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 2334-2337 8980692 (Conference Record of the IEEE Photovoltaic Specialists Conference).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Correlation of Electronic and Microscopic Properties of TiOx/Al-based Electron-selective Contacts in Silicon Solar Cells
AU - Titova, Valeriya
AU - Flathmann, Christoph
AU - Seibt, Michael
AU - Schmidt, Jan
PY - 2019/6
Y1 - 2019/6
N2 - Contacts to crystalline silicon (c-Si) based on ultrathin layers of silicon oxide (SiOy) and titanium oxide (TiOx) have recently been shown to be highly selective to electrons if aluminum (Al) is used as top metal. Such SiOy/TiOx/Al electron- selective rear contacts result in an excellent passivation and a low contact resistance (and hence an excellent selectivity) after annealing at 350°C, whereas before annealing very high contact resistances are measured combined with a poor surface passivation. In this contribution, we examine the SiO/TiOx/Al stack as implemented at the rear of our solar cells using Transmission Electron Microscopy (TEM)-based techniques and correlate electronic properties, deduced from measurements performed on solar cells, with the structural and compositional properties of the SiOy/TiOx/Al layer stack. We show that during annealing at 350°C, a significant interdiffusion mainly affecting the aluminum and to a lesser extend the oxygen and silicon distribution takes place within the layer stack, which seems to be the decisive prerequisite for the excellent electron conduction of the stack after annealing.
AB - Contacts to crystalline silicon (c-Si) based on ultrathin layers of silicon oxide (SiOy) and titanium oxide (TiOx) have recently been shown to be highly selective to electrons if aluminum (Al) is used as top metal. Such SiOy/TiOx/Al electron- selective rear contacts result in an excellent passivation and a low contact resistance (and hence an excellent selectivity) after annealing at 350°C, whereas before annealing very high contact resistances are measured combined with a poor surface passivation. In this contribution, we examine the SiO/TiOx/Al stack as implemented at the rear of our solar cells using Transmission Electron Microscopy (TEM)-based techniques and correlate electronic properties, deduced from measurements performed on solar cells, with the structural and compositional properties of the SiOy/TiOx/Al layer stack. We show that during annealing at 350°C, a significant interdiffusion mainly affecting the aluminum and to a lesser extend the oxygen and silicon distribution takes place within the layer stack, which seems to be the decisive prerequisite for the excellent electron conduction of the stack after annealing.
KW - atomic layer deposition
KW - electron-selective contact
KW - silicon solar cell
KW - SiO/TiO/Al stack
KW - titanium oxide
KW - transmission electronic microscopy
UR - http://www.scopus.com/inward/record.url?scp=85081596719&partnerID=8YFLogxK
U2 - 10.1109/PVSC40753.2019.8980692
DO - 10.1109/PVSC40753.2019.8980692
M3 - Conference contribution
AN - SCOPUS:85081596719
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 2334
EP - 2337
BT - 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Y2 - 16 June 2019 through 21 June 2019
ER -