Details
| Original language | English |
|---|---|
| Pages (from-to) | 936-942 |
| Number of pages | 7 |
| Journal | Progress in Photovoltaics: Research and Applications |
| Volume | 29 |
| Issue number | 8 |
| Early online date | 30 Mar 2021 |
| Publication status | Published - 16 Jul 2021 |
Abstract
The electrical current through poly-Si on oxide (POLO) solar cells is mediated by tunneling and by nanometer-sized pinholes in the interfacial oxide. To distinguish the two processes, a POLO junction with a measured pinhole density of 1 × 107 cm−2 is contacted by different contact areas ranging from 1 μm2 to 2.5 × 105 μm2, and the temperature-dependent current–voltage curves are measured for the different devices. Model regressions to the measured curves, their temperature dependence, and the quantized value of contact resistances indicate average numbers of pinholes per device corresponding to the expected pinhole density. For the small contacts, the different transport processes can be studied separately, which facilitates further improvements in respect to the present-day POLO junctions. Single-pinhole transport is found for one of the contacts with an area of 1 μm2. Random telegraph noise observed for this device in the current–voltage characteristics shows a high sensitivity to single charges.
Keywords
- pinhole transport, POLO junction, record energy conversion efficiency, silicon solar cell
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Progress in Photovoltaics: Research and Applications, Vol. 29, No. 8, 16.07.2021, p. 936-942.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Contacting a single nanometer-sized pinhole in the interfacial oxide of a poly-silicon on oxide (POLO) solar cell junction
AU - Bayerl, Paul
AU - Folchert, Nils
AU - Bayer, Johannes
AU - Dzinnik, Marvin
AU - Hollemann, Christina
AU - Brendel, Rolf
AU - Peibst, Robby
AU - Haug, Rolf J.
N1 - Funding Information: This work was funded by the Federal Ministry of Economic Affairs and Energy (BMWi), Germany (under project 26+ with the number FKZ0325827A), the State of Lower Saxony, Germany (via the Hannover School for Nanotechnology and the School for Contacts in Nanosystems), and the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany's Excellence Strategy–EXC 2123 Quantum Frontiers, 390837967. The authors thank Bianca Gehring for performing the TMAH etching and SEM analysis, Sören Schäfer, Felix Haase, and Jan Krügener for valuable discussions, and Raymond Zienriss, Annika Raugewitz, Hilke Fischer, and Sabine Schmidt for their help with sample processing. We thank Oliver Kerker for helping with the processing.
PY - 2021/7/16
Y1 - 2021/7/16
N2 - The electrical current through poly-Si on oxide (POLO) solar cells is mediated by tunneling and by nanometer-sized pinholes in the interfacial oxide. To distinguish the two processes, a POLO junction with a measured pinhole density of 1 × 107 cm−2 is contacted by different contact areas ranging from 1 μm2 to 2.5 × 105 μm2, and the temperature-dependent current–voltage curves are measured for the different devices. Model regressions to the measured curves, their temperature dependence, and the quantized value of contact resistances indicate average numbers of pinholes per device corresponding to the expected pinhole density. For the small contacts, the different transport processes can be studied separately, which facilitates further improvements in respect to the present-day POLO junctions. Single-pinhole transport is found for one of the contacts with an area of 1 μm2. Random telegraph noise observed for this device in the current–voltage characteristics shows a high sensitivity to single charges.
AB - The electrical current through poly-Si on oxide (POLO) solar cells is mediated by tunneling and by nanometer-sized pinholes in the interfacial oxide. To distinguish the two processes, a POLO junction with a measured pinhole density of 1 × 107 cm−2 is contacted by different contact areas ranging from 1 μm2 to 2.5 × 105 μm2, and the temperature-dependent current–voltage curves are measured for the different devices. Model regressions to the measured curves, their temperature dependence, and the quantized value of contact resistances indicate average numbers of pinholes per device corresponding to the expected pinhole density. For the small contacts, the different transport processes can be studied separately, which facilitates further improvements in respect to the present-day POLO junctions. Single-pinhole transport is found for one of the contacts with an area of 1 μm2. Random telegraph noise observed for this device in the current–voltage characteristics shows a high sensitivity to single charges.
KW - pinhole transport
KW - POLO junction
KW - record energy conversion efficiency
KW - silicon solar cell
UR - http://www.scopus.com/inward/record.url?scp=85103413902&partnerID=8YFLogxK
U2 - 10.1002/pip.3417
DO - 10.1002/pip.3417
M3 - Article
AN - SCOPUS:85103413902
VL - 29
SP - 936
EP - 942
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
SN - 1062-7995
IS - 8
ER -