Details
| Original language | English |
|---|---|
| Pages (from-to) | 194-199 |
| Number of pages | 6 |
| Journal | Journal of crystal growth |
| Volume | 143 |
| Issue number | 3-4 |
| Publication status | Published - 2 Oct 1994 |
| Externally published | Yes |
Abstract
Thin epitaxial Si1-xGex layers were grown on Si(001) substrates and analysed with transmission electron microscopy. We show that the critical thickness for perfect two-dimensional pseudomorphic Si1-xGex layer growth depends on two different mechanisms for strain relief. For low Ge concentrations (x<50%) the critical thickness is determined by the formation of misfit dislocations, whereas for high Ge concentrations it is rather governed by the formation of Stranski-Krastanov islands. In the concentration range between 50% and 60% both mechanisms become equally likely. We show that the critical Stranski-Krastanov thickness increases with decreasing lattice mismatch, in agreement with recent theoretical predictions.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Chemistry(all)
- Inorganic Chemistry
- Materials Science(all)
- Materials Chemistry
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In: Journal of crystal growth, Vol. 143, No. 3-4, 02.10.1994, p. 194-199.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Considerations about the critical thickness for pseudomorphic Si1-xGex growth on Si(001)
AU - Osten, H. J.
AU - Zeindl, H. P.
AU - Bugiel, E.
PY - 1994/10/2
Y1 - 1994/10/2
N2 - Thin epitaxial Si1-xGex layers were grown on Si(001) substrates and analysed with transmission electron microscopy. We show that the critical thickness for perfect two-dimensional pseudomorphic Si1-xGex layer growth depends on two different mechanisms for strain relief. For low Ge concentrations (x<50%) the critical thickness is determined by the formation of misfit dislocations, whereas for high Ge concentrations it is rather governed by the formation of Stranski-Krastanov islands. In the concentration range between 50% and 60% both mechanisms become equally likely. We show that the critical Stranski-Krastanov thickness increases with decreasing lattice mismatch, in agreement with recent theoretical predictions.
AB - Thin epitaxial Si1-xGex layers were grown on Si(001) substrates and analysed with transmission electron microscopy. We show that the critical thickness for perfect two-dimensional pseudomorphic Si1-xGex layer growth depends on two different mechanisms for strain relief. For low Ge concentrations (x<50%) the critical thickness is determined by the formation of misfit dislocations, whereas for high Ge concentrations it is rather governed by the formation of Stranski-Krastanov islands. In the concentration range between 50% and 60% both mechanisms become equally likely. We show that the critical Stranski-Krastanov thickness increases with decreasing lattice mismatch, in agreement with recent theoretical predictions.
UR - http://www.scopus.com/inward/record.url?scp=0028761613&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(94)90055-8
DO - 10.1016/0022-0248(94)90055-8
M3 - Article
AN - SCOPUS:0028761613
VL - 143
SP - 194
EP - 199
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
IS - 3-4
ER -