Details
| Original language | English |
|---|---|
| Article number | 012030 |
| Journal | Journal of Physics: Conference Series |
| Volume | 1236 |
| Publication status | Published - Jun 2019 |
| Event | International Conference on Emerging Trends in Applied and Computational Physics 2019, ETACP 2019 - Saint Petersburg, Russian Federation Duration: 21 Mar 2019 → 22 Mar 2019 |
Abstract
In this article we present an integrated approach to sapphire crystals growth simulation. Thermally induced stresses in sapphire crystals growing by horizontal directed crystallization are simulated by finite element method. The simulation results correspond to experimental observations. The results of the investigation allow to improve the process of crystal growth to obtain high quality large sapphire crystal.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Journal of Physics: Conference Series, Vol. 1236, 012030, 06.2019.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Computational approach to the simulation of sapphire crystals growth by horizontal directed crystallization method
AU - Klunnikova, Y. V.
AU - Anikeev, M. V.
AU - Nackenhorst, U.
AU - Filimonov, A. V.
N1 - Funding information: This work in Southern Federal University and Leibniz University of Hanover was supported by the Ministry of Science and Education of the Russian Federation and the German Academic Exchange Service (DAAD) within the framework of the joint program “Mikhail Lomonosov”. This work in the Peter the Great St. Petersburg State Polytechnic University was supported by the Ministry of Science and Education of the Russian Federation, project no. 3.1150.2017/4.6.
PY - 2019/6
Y1 - 2019/6
N2 - In this article we present an integrated approach to sapphire crystals growth simulation. Thermally induced stresses in sapphire crystals growing by horizontal directed crystallization are simulated by finite element method. The simulation results correspond to experimental observations. The results of the investigation allow to improve the process of crystal growth to obtain high quality large sapphire crystal.
AB - In this article we present an integrated approach to sapphire crystals growth simulation. Thermally induced stresses in sapphire crystals growing by horizontal directed crystallization are simulated by finite element method. The simulation results correspond to experimental observations. The results of the investigation allow to improve the process of crystal growth to obtain high quality large sapphire crystal.
UR - http://www.scopus.com/inward/record.url?scp=85069507137&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/1236/1/012030
DO - 10.1088/1742-6596/1236/1/012030
M3 - Conference article
AN - SCOPUS:85069507137
VL - 1236
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
M1 - 012030
T2 - International Conference on Emerging Trends in Applied and Computational Physics 2019, ETACP 2019
Y2 - 21 March 2019 through 22 March 2019
ER -