Details
| Original language | English |
|---|---|
| Pages (from-to) | 529-536 |
| Number of pages | 8 |
| Journal | Progress in Photovoltaics: Research and Applications |
| Volume | 8 |
| Issue number | 5 |
| Publication status | Published - 2 Nov 2000 |
| Externally published | Yes |
Abstract
Plasma enhanced chemical vapor deposited silicon nitride films have been used to passivate both the front and rear surface of simplified PERC silicon solar cells (planar surface, single-step emitter). An independently confirmed open circuit voltage (Voc) of 667 mV was measured, proving the outstanding surface passivation provided by the silicon nitride films. The achieved Voc represents a significant improvement for all-SiN passivated silicon solar cells. A conversion efficiency of 17.8% was obtained. For comparison, similar cells with different passivation schemes, including high quality, thermally grown TCA oxides and thin SiO2/SiN double layers, were also investigated. Open circuit voltages up to 673 mV and conversion efficiencies up to 18.3% were achieved.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
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In: Progress in Photovoltaics: Research and Applications, Vol. 8, No. 5, 02.11.2000, p. 529-536.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Comparison of the open circuit voltage of simplified PERC cells passivated with PECVD silicon nitride and thermal silicon oxide
AU - Kerr, Mark
AU - Schmidt, Jan
AU - Cuevas, Andres
PY - 2000/11/2
Y1 - 2000/11/2
N2 - Plasma enhanced chemical vapor deposited silicon nitride films have been used to passivate both the front and rear surface of simplified PERC silicon solar cells (planar surface, single-step emitter). An independently confirmed open circuit voltage (Voc) of 667 mV was measured, proving the outstanding surface passivation provided by the silicon nitride films. The achieved Voc represents a significant improvement for all-SiN passivated silicon solar cells. A conversion efficiency of 17.8% was obtained. For comparison, similar cells with different passivation schemes, including high quality, thermally grown TCA oxides and thin SiO2/SiN double layers, were also investigated. Open circuit voltages up to 673 mV and conversion efficiencies up to 18.3% were achieved.
AB - Plasma enhanced chemical vapor deposited silicon nitride films have been used to passivate both the front and rear surface of simplified PERC silicon solar cells (planar surface, single-step emitter). An independently confirmed open circuit voltage (Voc) of 667 mV was measured, proving the outstanding surface passivation provided by the silicon nitride films. The achieved Voc represents a significant improvement for all-SiN passivated silicon solar cells. A conversion efficiency of 17.8% was obtained. For comparison, similar cells with different passivation schemes, including high quality, thermally grown TCA oxides and thin SiO2/SiN double layers, were also investigated. Open circuit voltages up to 673 mV and conversion efficiencies up to 18.3% were achieved.
UR - http://www.scopus.com/inward/record.url?scp=0034268274&partnerID=8YFLogxK
U2 - 10.1002/1099-159X(200009/10)8:5<529::AID-PIP334>3.0.CO;2-6
DO - 10.1002/1099-159X(200009/10)8:5<529::AID-PIP334>3.0.CO;2-6
M3 - Article
AN - SCOPUS:0034268274
VL - 8
SP - 529
EP - 536
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
SN - 1062-7995
IS - 5
ER -