Details
| Original language | English |
|---|---|
| Pages (from-to) | 342-346 |
| Number of pages | 5 |
| Journal | THIN SOLID FILMS |
| Volume | 369 |
| Issue number | 1 |
| Publication status | Published - 3 Jul 2000 |
| Externally published | Yes |
| Event | The International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Japan Duration: 12 Sept 1999 → 17 Sept 1999 |
Abstract
We compare the performance of heterojunction bipolar transistors with pure SiGe (SiGe HBTs) with those incorporating C-doped SiGe base layers (SiGe:C HBTs). The transistors were produced in a single-polysilicon technology with implanted, epi-free wells. Doping the SiGe layers with low C concentration ( approximately 0.2%) allows us to use a higher base boron dose than for C-free HBTs, without B outdiffusion from the heteroepitaxial layer. As a result, the device RF performance can be significantly improved. The higher base doping of SiGe:C HBTs increases the peak fmax from around 50 up to more than 80 GHz, and reduces the minimum noise figure (at 10 GHz) from >3 to 2 dB and ring oscillator delays from 21-22 to 12-14 ps. The SiGe:C HBTs also exhibit leakage currents, which are sufficiently low for reliable IC application.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Materials Science(all)
- Surfaces, Coatings and Films
- Materials Science(all)
- Metals and Alloys
- Materials Science(all)
- Materials Chemistry
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In: THIN SOLID FILMS, Vol. 369, No. 1, 03.07.2000, p. 342-346.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Comparison of SiGe and SiGe:C heterojunction bipolar transistors
AU - Knoll, D.
AU - Heinemann, B.
AU - Ehwald, K. E.
AU - Tillack, B.
AU - Schley, P.
AU - Osten, H. J.
PY - 2000/7/3
Y1 - 2000/7/3
N2 - We compare the performance of heterojunction bipolar transistors with pure SiGe (SiGe HBTs) with those incorporating C-doped SiGe base layers (SiGe:C HBTs). The transistors were produced in a single-polysilicon technology with implanted, epi-free wells. Doping the SiGe layers with low C concentration ( approximately 0.2%) allows us to use a higher base boron dose than for C-free HBTs, without B outdiffusion from the heteroepitaxial layer. As a result, the device RF performance can be significantly improved. The higher base doping of SiGe:C HBTs increases the peak fmax from around 50 up to more than 80 GHz, and reduces the minimum noise figure (at 10 GHz) from >3 to 2 dB and ring oscillator delays from 21-22 to 12-14 ps. The SiGe:C HBTs also exhibit leakage currents, which are sufficiently low for reliable IC application.
AB - We compare the performance of heterojunction bipolar transistors with pure SiGe (SiGe HBTs) with those incorporating C-doped SiGe base layers (SiGe:C HBTs). The transistors were produced in a single-polysilicon technology with implanted, epi-free wells. Doping the SiGe layers with low C concentration ( approximately 0.2%) allows us to use a higher base boron dose than for C-free HBTs, without B outdiffusion from the heteroepitaxial layer. As a result, the device RF performance can be significantly improved. The higher base doping of SiGe:C HBTs increases the peak fmax from around 50 up to more than 80 GHz, and reduces the minimum noise figure (at 10 GHz) from >3 to 2 dB and ring oscillator delays from 21-22 to 12-14 ps. The SiGe:C HBTs also exhibit leakage currents, which are sufficiently low for reliable IC application.
UR - http://www.scopus.com/inward/record.url?scp=0034229590&partnerID=8YFLogxK
U2 - 10.1016/S0040-6090(00)00866-X
DO - 10.1016/S0040-6090(00)00866-X
M3 - Conference article
AN - SCOPUS:0034229590
VL - 369
SP - 342
EP - 346
JO - THIN SOLID FILMS
JF - THIN SOLID FILMS
SN - 0040-6090
IS - 1
T2 - The International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI)
Y2 - 12 September 1999 through 17 September 1999
ER -