Details
| Original language | English |
|---|---|
| Article number | 2200578 |
| Journal | Solar RRL |
| Volume | 7 |
| Issue number | 8 |
| Early online date | 27 Jul 2022 |
| Publication status | Published - 28 Apr 2023 |
Abstract
In addition to excellent surface passivation and carrier selectivity, the structure based on the heavily doped polysilicon layer on an ultrathin silicon oxide interlayer also demonstrates strong impurity gettering effects. Herein, the gettering strength of a range of phosphorus- or boron-doped polysilicon films from different fabrication techniques is assessed and compared. Iron, one of the most common metallic impurities in silicon, is used as a tracer impurity to quantify the gettering strength (segregation coefficient). A comparison of the experimental results to the literature, combined with measurements of the electrically active and inactive dopant concentrations, enables us to suggest the main gettering mechanisms in different polysilicon films. The differences in the segregation coefficients of the phosphorus-doped polysilicon films for iron are within one order of magnitude, in spite of their different combinations of gettering mechanisms. On the other hand, boron-doped polysilicon films show a large variation in their gettering effects, although the predominant gettering mechanisms are all attributed to electrically inactive boron, according to the current understanding of the gettering mechanisms from the literature. Finally, the impact of different polysilicon gettering effects on the efficiency of tunnel oxide-passivated contact (TOPCon) cells is simulated and discussed.
Keywords
- gettering, iron, polysilicon/oxide passivating contacts, segregation coefficient, silicon solar cells
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Energy(all)
- Energy Engineering and Power Technology
- Engineering(all)
- Electrical and Electronic Engineering
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In: Solar RRL, Vol. 7, No. 8, 2200578, 28.04.2023.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Comparing the Gettering Effect of Heavily Doped Polysilicon Films and Its Implications for Tunnel Oxide-Passivated Contact Solar Cells
AU - Yang, Zhongshu
AU - Krügener, Jan
AU - Feldmann, Frank
AU - Polzin, Jana Isabelle
AU - Steinhauser, Bernd
AU - Aleshin, Matvei
AU - Le, Tien T.
AU - Macdonald, Daniel
AU - Liu, An Yao
N1 - Funding Information: This work was supported by the Australian Renewable Energy Agency (ARENA) through project RND017 and the Australian Centre for Advanced Photovoltaics (ACAP). A.L. acknowledges funding from the ACAP postdoctoral fellowship scheme. This work was made possible through the access to the NCRIS facilities (Heavy Ion Accelerator Capability), the ACT node of the Australian National Fabrication Facility (ANFF‐ACT), and the Australian Microscopy & Microanalysis Research Facility at the Centre for Advanced Microscopy, at the Australian National University (ANU). The authors are grateful to the ANU colleagues Dr. Frank Brink and Dr. Thomas Ratcliff for assistance with scanning electron microscopy and ion implantation processes.
PY - 2023/4/28
Y1 - 2023/4/28
N2 - In addition to excellent surface passivation and carrier selectivity, the structure based on the heavily doped polysilicon layer on an ultrathin silicon oxide interlayer also demonstrates strong impurity gettering effects. Herein, the gettering strength of a range of phosphorus- or boron-doped polysilicon films from different fabrication techniques is assessed and compared. Iron, one of the most common metallic impurities in silicon, is used as a tracer impurity to quantify the gettering strength (segregation coefficient). A comparison of the experimental results to the literature, combined with measurements of the electrically active and inactive dopant concentrations, enables us to suggest the main gettering mechanisms in different polysilicon films. The differences in the segregation coefficients of the phosphorus-doped polysilicon films for iron are within one order of magnitude, in spite of their different combinations of gettering mechanisms. On the other hand, boron-doped polysilicon films show a large variation in their gettering effects, although the predominant gettering mechanisms are all attributed to electrically inactive boron, according to the current understanding of the gettering mechanisms from the literature. Finally, the impact of different polysilicon gettering effects on the efficiency of tunnel oxide-passivated contact (TOPCon) cells is simulated and discussed.
AB - In addition to excellent surface passivation and carrier selectivity, the structure based on the heavily doped polysilicon layer on an ultrathin silicon oxide interlayer also demonstrates strong impurity gettering effects. Herein, the gettering strength of a range of phosphorus- or boron-doped polysilicon films from different fabrication techniques is assessed and compared. Iron, one of the most common metallic impurities in silicon, is used as a tracer impurity to quantify the gettering strength (segregation coefficient). A comparison of the experimental results to the literature, combined with measurements of the electrically active and inactive dopant concentrations, enables us to suggest the main gettering mechanisms in different polysilicon films. The differences in the segregation coefficients of the phosphorus-doped polysilicon films for iron are within one order of magnitude, in spite of their different combinations of gettering mechanisms. On the other hand, boron-doped polysilicon films show a large variation in their gettering effects, although the predominant gettering mechanisms are all attributed to electrically inactive boron, according to the current understanding of the gettering mechanisms from the literature. Finally, the impact of different polysilicon gettering effects on the efficiency of tunnel oxide-passivated contact (TOPCon) cells is simulated and discussed.
KW - gettering
KW - iron
KW - polysilicon/oxide passivating contacts
KW - segregation coefficient
KW - silicon solar cells
UR - http://www.scopus.com/inward/record.url?scp=85135252208&partnerID=8YFLogxK
U2 - 10.1002/solr.202200578
DO - 10.1002/solr.202200578
M3 - Article
AN - SCOPUS:85135252208
VL - 7
JO - Solar RRL
JF - Solar RRL
IS - 8
M1 - 2200578
ER -