Details
| Original language | English |
|---|---|
| Pages (from-to) | 347-351 |
| Number of pages | 5 |
| Journal | THIN SOLID FILMS |
| Volume | 369 |
| Issue number | 1 |
| Publication status | Published - 3 Jul 2000 |
| Externally published | Yes |
| Event | International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Japan Duration: 12 Sept 1999 → 17 Sept 1999 |
Abstract
Here we present a comparative analysis of vertical minority carrier transport in Si, Si0.925Ge0.075, Si0.998C0.002, and Si0.99C0.01 base layers of bipolar transistors. We show that a conventional transit time analysis for extracting the minority carrier mobilities fails for doping profiles containing a low doped emitter region. The contribution of locally compensated charge storage, called neutral charge storage, in the emitter-base depletion region must not be neglected. To overcome drawbacks of the simple transit time analysis, we use 2D device simulations to obtain an improved understanding of the measured high-frequency parameters. Taking into account the real doping profiles and device structures, and using a calibrated parameter set for strained SiGe, the simulation results for the Si, Si1-xGex, and Si1-yCy(y≤0.2%) base layer transistors reproduce very well the measured transit times (assuming the Si data for the electron mobility μn) in the heteroepiaxial base layers. In the case of higher carbon concentration (y = 1%), the electron mobility is reduced by a factor of two.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Materials Science(all)
- Surfaces, Coatings and Films
- Materials Science(all)
- Metals and Alloys
- Materials Science(all)
- Materials Chemistry
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In: THIN SOLID FILMS, Vol. 369, No. 1, 03.07.2000, p. 347-351.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Comparative analysis of minority carrier transport in npn bipolar transistors with Si, Si1-xGex, and Si1-yCy base layers
AU - Heinemann, B.
AU - Knoll, D.
AU - Fischer, G. G.
AU - Schley, P.
AU - Osten, H. J.
PY - 2000/7/3
Y1 - 2000/7/3
N2 - Here we present a comparative analysis of vertical minority carrier transport in Si, Si0.925Ge0.075, Si0.998C0.002, and Si0.99C0.01 base layers of bipolar transistors. We show that a conventional transit time analysis for extracting the minority carrier mobilities fails for doping profiles containing a low doped emitter region. The contribution of locally compensated charge storage, called neutral charge storage, in the emitter-base depletion region must not be neglected. To overcome drawbacks of the simple transit time analysis, we use 2D device simulations to obtain an improved understanding of the measured high-frequency parameters. Taking into account the real doping profiles and device structures, and using a calibrated parameter set for strained SiGe, the simulation results for the Si, Si1-xGex, and Si1-yCy(y≤0.2%) base layer transistors reproduce very well the measured transit times (assuming the Si data for the electron mobility μn) in the heteroepiaxial base layers. In the case of higher carbon concentration (y = 1%), the electron mobility is reduced by a factor of two.
AB - Here we present a comparative analysis of vertical minority carrier transport in Si, Si0.925Ge0.075, Si0.998C0.002, and Si0.99C0.01 base layers of bipolar transistors. We show that a conventional transit time analysis for extracting the minority carrier mobilities fails for doping profiles containing a low doped emitter region. The contribution of locally compensated charge storage, called neutral charge storage, in the emitter-base depletion region must not be neglected. To overcome drawbacks of the simple transit time analysis, we use 2D device simulations to obtain an improved understanding of the measured high-frequency parameters. Taking into account the real doping profiles and device structures, and using a calibrated parameter set for strained SiGe, the simulation results for the Si, Si1-xGex, and Si1-yCy(y≤0.2%) base layer transistors reproduce very well the measured transit times (assuming the Si data for the electron mobility μn) in the heteroepiaxial base layers. In the case of higher carbon concentration (y = 1%), the electron mobility is reduced by a factor of two.
UR - http://www.scopus.com/inward/record.url?scp=0034225333&partnerID=8YFLogxK
U2 - 10.1016/S0040-6090(00)00867-1
DO - 10.1016/S0040-6090(00)00867-1
M3 - Conference article
AN - SCOPUS:0034225333
VL - 369
SP - 347
EP - 351
JO - THIN SOLID FILMS
JF - THIN SOLID FILMS
SN - 0040-6090
IS - 1
T2 - International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI)
Y2 - 12 September 1999 through 17 September 1999
ER -