Details
| Original language | English |
|---|---|
| Article number | 114506 |
| Journal | Journal of applied physics |
| Volume | 106 |
| Issue number | 11 |
| Early online date | 10 Dec 2009 |
| Publication status | Published - 2009 |
| Externally published | Yes |
Abstract
We report on a calibration-free dynamic carrier lifetime imaging technique yielding spatially resolved carrier lifetime maps of silicon wafers within data acquisition times of seconds. Our approach is based on infrared lifetime mapping (ILM), which exploits the proportionality between the measured infrared emission and the free carrier density. Dynamic ILM determines the lifetime analytically from the signal ratio of infrared camera images recorded directly after turning on an excitation source and after steady-state conditions are established within the sample. We investigate the applicability of dynamic infrared lifetime mapping on silicon wafers with rough surfaces, study the impact of injection dependencies, and examine the technical requirements for measuring low lifetime values in the range of microseconds. While the dynamic ILM approach is suitable for lifetimes exceeding 10 μs, a combination with steady-state ILM is required to measure lifetime values in the range of 1 μs. The injection dependence does not hamper a correct determination of the carrier lifetime by the dynamic evaluation procedure.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
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In: Journal of applied physics, Vol. 106, No. 11, 114506, 2009.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Combined dynamic and steady-state infrared camera based carrier lifetime imaging of silicon wafers
AU - Ramspeck, Klaus
AU - Bothe, Karsten
AU - Schmidt, Jan
AU - Brendel, Rolf
N1 - Funding Information: Thanks to Rafael Krain for temperature dependent QSSPC measurements. This work was supported by the German state of Lower Saxony.
PY - 2009
Y1 - 2009
N2 - We report on a calibration-free dynamic carrier lifetime imaging technique yielding spatially resolved carrier lifetime maps of silicon wafers within data acquisition times of seconds. Our approach is based on infrared lifetime mapping (ILM), which exploits the proportionality between the measured infrared emission and the free carrier density. Dynamic ILM determines the lifetime analytically from the signal ratio of infrared camera images recorded directly after turning on an excitation source and after steady-state conditions are established within the sample. We investigate the applicability of dynamic infrared lifetime mapping on silicon wafers with rough surfaces, study the impact of injection dependencies, and examine the technical requirements for measuring low lifetime values in the range of microseconds. While the dynamic ILM approach is suitable for lifetimes exceeding 10 μs, a combination with steady-state ILM is required to measure lifetime values in the range of 1 μs. The injection dependence does not hamper a correct determination of the carrier lifetime by the dynamic evaluation procedure.
AB - We report on a calibration-free dynamic carrier lifetime imaging technique yielding spatially resolved carrier lifetime maps of silicon wafers within data acquisition times of seconds. Our approach is based on infrared lifetime mapping (ILM), which exploits the proportionality between the measured infrared emission and the free carrier density. Dynamic ILM determines the lifetime analytically from the signal ratio of infrared camera images recorded directly after turning on an excitation source and after steady-state conditions are established within the sample. We investigate the applicability of dynamic infrared lifetime mapping on silicon wafers with rough surfaces, study the impact of injection dependencies, and examine the technical requirements for measuring low lifetime values in the range of microseconds. While the dynamic ILM approach is suitable for lifetimes exceeding 10 μs, a combination with steady-state ILM is required to measure lifetime values in the range of 1 μs. The injection dependence does not hamper a correct determination of the carrier lifetime by the dynamic evaluation procedure.
UR - http://www.scopus.com/inward/record.url?scp=72449166950&partnerID=8YFLogxK
U2 - 10.1063/1.3261733
DO - 10.1063/1.3261733
M3 - Article
AN - SCOPUS:72449166950
VL - 106
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 11
M1 - 114506
ER -