Details
| Original language | English |
|---|---|
| Pages (from-to) | 1163-1165 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 83 |
| Issue number | 6 |
| Publication status | Published - 5 Aug 2003 |
Abstract
A study was performed on combined electron-beam lithography and atomic force microscopy used for the fabrication of variable-coupling quantum dots. The conventional electron-beam lithography was combined with direct nanofabrication by local anodic oxidation to produce a parallel double quantum dot based on a GaAs/AlGaAs heterostructure. It was found that the combination of both nanolithography methods allowed fabrication of robust in-plane gates.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
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In: Applied Physics Letters, Vol. 83, No. 6, 05.08.2003, p. 1163-1165.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Combined atomic force microscope and electron-beam lithography used for the fabrication of variable-coupling quantum dots
AU - Rogge, M. C.
AU - Fühner, C.
AU - Keyser, U. F.
AU - Haug, R. J.
AU - Bichler, M.
AU - Abstreiter, G.
AU - Wegscheider, W.
PY - 2003/8/5
Y1 - 2003/8/5
N2 - A study was performed on combined electron-beam lithography and atomic force microscopy used for the fabrication of variable-coupling quantum dots. The conventional electron-beam lithography was combined with direct nanofabrication by local anodic oxidation to produce a parallel double quantum dot based on a GaAs/AlGaAs heterostructure. It was found that the combination of both nanolithography methods allowed fabrication of robust in-plane gates.
AB - A study was performed on combined electron-beam lithography and atomic force microscopy used for the fabrication of variable-coupling quantum dots. The conventional electron-beam lithography was combined with direct nanofabrication by local anodic oxidation to produce a parallel double quantum dot based on a GaAs/AlGaAs heterostructure. It was found that the combination of both nanolithography methods allowed fabrication of robust in-plane gates.
UR - http://www.scopus.com/inward/record.url?scp=0041423518&partnerID=8YFLogxK
U2 - 10.1063/1.1599972
DO - 10.1063/1.1599972
M3 - Article
AN - SCOPUS:0041423518
VL - 83
SP - 1163
EP - 1165
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 6
ER -