CMOS integration of epitaxial Gd2O3 high-k gate dielectrics

Research output: Contribution to journal › Article › Research › peer review

Authors

  • H. D.B. Gottlob
  • T. Echtermeyer
  • T. Mollenhauer
  • J. K. Efavi
  • M. Schmidt
  • T. Wahlbrink
  • M. C. Lemme
  • H. Kurz
  • M. Czernohorsky
  • E. Bugiel
  • H. J. Osten
  • A. Fissel

Research Organisations

External Research Organisations

  • AMO GmbH
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Details

Original languageEnglish
Pages (from-to)979-985
Number of pages7
JournalSolid-State Electronics
Volume50
Issue number6
Early online date22 Jun 2006
Publication statusPublished - Jun 2006

Abstract

Epitaxial gadolinium oxide (Gd2O3) high-k dielectrics are investigated with respect to their CMOS compatibility in metal oxide semiconductor (MOS) capacitors and field effect transistors (MOSFETs). MOS capacitors with various gate electrodes are exposed to typical CMOS process steps and evaluated with capacitance voltage (CV) and current voltage (JV) measurements. The effects of high temperature processes on thermal stabilities of channel/dielectric and dielectric/gate electrode interfaces is studied in detail. A feasible CMOS process with epitaxial gate oxides and metal gate electrodes is identified and demonstrated by a fully functional n-MOSFET for the first time.

Keywords

    CMOS integration, Epitaxial gate dielectric, Gadolinium oxide (GdO), High-k gate dielectric, Metal gate electrode, Silicon on insulator (SOI)

ASJC Scopus subject areas

Cite this

CMOS integration of epitaxial Gd2O3 high-k gate dielectrics. / Gottlob, H. D.B.; Echtermeyer, T.; Mollenhauer, T. et al.
In: Solid-State Electronics, Vol. 50, No. 6, 06.2006, p. 979-985.

Research output: Contribution to journal › Article › Research › peer review

Gottlob, HDB, Echtermeyer, T, Mollenhauer, T, Efavi, JK, Schmidt, M, Wahlbrink, T, Lemme, MC, Kurz, H, Czernohorsky, M, Bugiel, E, Osten, HJ & Fissel, A 2006, 'CMOS integration of epitaxial Gd2O3 high-k gate dielectrics', Solid-State Electronics, vol. 50, no. 6, pp. 979-985. https://doi.org/10.1016/j.sse.2006.04.018
Gottlob, H. D. B., Echtermeyer, T., Mollenhauer, T., Efavi, J. K., Schmidt, M., Wahlbrink, T., Lemme, M. C., Kurz, H., Czernohorsky, M., Bugiel, E., Osten, H. J., & Fissel, A. (2006). CMOS integration of epitaxial Gd2O3 high-k gate dielectrics. Solid-State Electronics, 50(6), 979-985. https://doi.org/10.1016/j.sse.2006.04.018
Gottlob HDB, Echtermeyer T, Mollenhauer T, Efavi JK, Schmidt M, Wahlbrink T et al. CMOS integration of epitaxial Gd2O3 high-k gate dielectrics. Solid-State Electronics. 2006 Jun;50(6):979-985. Epub 2006 Jun 22. doi: 10.1016/j.sse.2006.04.018
Gottlob, H. D.B. ; Echtermeyer, T. ; Mollenhauer, T. et al. / CMOS integration of epitaxial Gd2O3 high-k gate dielectrics. In: Solid-State Electronics. 2006 ; Vol. 50, No. 6. pp. 979-985.
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abstract = "Epitaxial gadolinium oxide (Gd2O3) high-k dielectrics are investigated with respect to their CMOS compatibility in metal oxide semiconductor (MOS) capacitors and field effect transistors (MOSFETs). MOS capacitors with various gate electrodes are exposed to typical CMOS process steps and evaluated with capacitance voltage (CV) and current voltage (JV) measurements. The effects of high temperature processes on thermal stabilities of channel/dielectric and dielectric/gate electrode interfaces is studied in detail. A feasible CMOS process with epitaxial gate oxides and metal gate electrodes is identified and demonstrated by a fully functional n-MOSFET for the first time.",
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AU - Gottlob, H. D.B.

AU - Echtermeyer, T.

AU - Mollenhauer, T.

AU - Efavi, J. K.

AU - Schmidt, M.

AU - Wahlbrink, T.

AU - Lemme, M. C.

AU - Kurz, H.

AU - Czernohorsky, M.

AU - Bugiel, E.

AU - Osten, H. J.

AU - Fissel, A.

N1 - Funding Information: The authors acknowledge financial support by the German Federal Ministry of Education and Research (BMBF project “KrisMOS”, 01 M 3142), AMD Saxony LLC & Co. KG, Infineon Technologies AG and Freescale Halbleiter Deutschland GmbH. Furthermore, FIB preparation, TEM, and EDX analysis by M. Bückins, F. Dorn, T. Weirich, and J. Mayer from GFE, RWTH Aachen University, is gratefully acknowledged.

PY - 2006/6

Y1 - 2006/6

N2 - Epitaxial gadolinium oxide (Gd2O3) high-k dielectrics are investigated with respect to their CMOS compatibility in metal oxide semiconductor (MOS) capacitors and field effect transistors (MOSFETs). MOS capacitors with various gate electrodes are exposed to typical CMOS process steps and evaluated with capacitance voltage (CV) and current voltage (JV) measurements. The effects of high temperature processes on thermal stabilities of channel/dielectric and dielectric/gate electrode interfaces is studied in detail. A feasible CMOS process with epitaxial gate oxides and metal gate electrodes is identified and demonstrated by a fully functional n-MOSFET for the first time.

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KW - Epitaxial gate dielectric

KW - Gadolinium oxide (GdO)

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