Details
| Original language | English |
|---|---|
| Pages (from-to) | 101-107 |
| Number of pages | 7 |
| Journal | Energy Procedia |
| Volume | 38 |
| Publication status | Published - 2013 |
| Externally published | Yes |
| Event | 3rd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2013 - Hamelin, Germany Duration: 25 Mar 2013 → 27 Mar 2013 |
Abstract
In this contribution, we apply three different camera-based luminescence imaging techniques to mc-Si wafers and solar cells, fabricated on neighboring wafers. On wafer level, we determine the spatially-resolved carrier lifetime using calibrated photoluminescence lifetime imaging. On the solar cell level, we use band-to-band electroluminescence and sub-band-gap electroluminescence imaging for the characterisation. We analyze the differences obtained by the different techniques in specific defective areas. Characteristic regions are additionally examined using deep-level transient spectroscopy (DLTS). Comparing different luminescence images, we find different signal correlations in selected regions of the wafers and the neighboring cells presumably caused by different types of defects, which react more or less effective on the phosphorus gettering during the solar cell process. DLTS spectra show that in the edge region of the wafer close to the crucible, FeB pairs are present in the wafer as well as in the cell. However, the FeB concentration in the cell is, due to phosphorus gettering during the cell process, reduced by one order of magnitude. In regions which appear as very recombination-active defect clusters in the solar cell, we detect ZnB pairs by DLTS analysis. Note that the ZnB itself is a shallow centre and therefore expected to be not strong recombination active. However, our measurements reveal that Zn is present in regions with increased recombination activity, which is also in good agreement with the high total Zn concentration measured in the mc-Si ingot. We hence conjecture that dislocation clusters decorated by Zn are responsible for the non-getterable defect regions.
ASJC Scopus subject areas
- Energy(all)
- General Energy
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In: Energy Procedia, Vol. 38, 2013, p. 101-107.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Classification of defective regions in p-type multicrystalline silicon by comparing luminescence images measured under different conditions
AU - Krain, Rafael
AU - Beljakova, Svetlana
AU - Herlufsen, Sandra
AU - Krieger, Michael
AU - Schmidt, Jan
N1 - Funding Information: This work was financially supported by the German Federal Ministry for the Environment, Nature
PY - 2013
Y1 - 2013
N2 - In this contribution, we apply three different camera-based luminescence imaging techniques to mc-Si wafers and solar cells, fabricated on neighboring wafers. On wafer level, we determine the spatially-resolved carrier lifetime using calibrated photoluminescence lifetime imaging. On the solar cell level, we use band-to-band electroluminescence and sub-band-gap electroluminescence imaging for the characterisation. We analyze the differences obtained by the different techniques in specific defective areas. Characteristic regions are additionally examined using deep-level transient spectroscopy (DLTS). Comparing different luminescence images, we find different signal correlations in selected regions of the wafers and the neighboring cells presumably caused by different types of defects, which react more or less effective on the phosphorus gettering during the solar cell process. DLTS spectra show that in the edge region of the wafer close to the crucible, FeB pairs are present in the wafer as well as in the cell. However, the FeB concentration in the cell is, due to phosphorus gettering during the cell process, reduced by one order of magnitude. In regions which appear as very recombination-active defect clusters in the solar cell, we detect ZnB pairs by DLTS analysis. Note that the ZnB itself is a shallow centre and therefore expected to be not strong recombination active. However, our measurements reveal that Zn is present in regions with increased recombination activity, which is also in good agreement with the high total Zn concentration measured in the mc-Si ingot. We hence conjecture that dislocation clusters decorated by Zn are responsible for the non-getterable defect regions.
AB - In this contribution, we apply three different camera-based luminescence imaging techniques to mc-Si wafers and solar cells, fabricated on neighboring wafers. On wafer level, we determine the spatially-resolved carrier lifetime using calibrated photoluminescence lifetime imaging. On the solar cell level, we use band-to-band electroluminescence and sub-band-gap electroluminescence imaging for the characterisation. We analyze the differences obtained by the different techniques in specific defective areas. Characteristic regions are additionally examined using deep-level transient spectroscopy (DLTS). Comparing different luminescence images, we find different signal correlations in selected regions of the wafers and the neighboring cells presumably caused by different types of defects, which react more or less effective on the phosphorus gettering during the solar cell process. DLTS spectra show that in the edge region of the wafer close to the crucible, FeB pairs are present in the wafer as well as in the cell. However, the FeB concentration in the cell is, due to phosphorus gettering during the cell process, reduced by one order of magnitude. In regions which appear as very recombination-active defect clusters in the solar cell, we detect ZnB pairs by DLTS analysis. Note that the ZnB itself is a shallow centre and therefore expected to be not strong recombination active. However, our measurements reveal that Zn is present in regions with increased recombination activity, which is also in good agreement with the high total Zn concentration measured in the mc-Si ingot. We hence conjecture that dislocation clusters decorated by Zn are responsible for the non-getterable defect regions.
UR - http://www.scopus.com/inward/record.url?scp=84898757591&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2013.07.255
DO - 10.1016/j.egypro.2013.07.255
M3 - Conference article
AN - SCOPUS:84898757591
VL - 38
SP - 101
EP - 107
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
T2 - 3rd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2013
Y2 - 25 March 2013 through 27 March 2013
ER -