Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells

Research output: Contribution to journalArticleResearchpeer review

Authors

  • V. V. Bel'kov
  • S. D. Ganichev
  • Petra Schneider
  • C. Back
  • Michael Oestreich
  • Jörg Rudolph
  • Daniel Hägele
  • L. E. Golub
  • W. Wegscheider
  • W. Prettl

Research Organisations

External Research Organisations

  • RAS - Ioffe Physico Technical Institute
  • Technical University of Munich (TUM)
  • University of Regensburg
View graph of relations

Details

Original languageEnglish
Pages (from-to)283-286
Number of pages4
JournalSolid State Communications
Volume128
Issue number8
Publication statusPublished - 3 Sept 2003

Abstract

We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.

Keywords

    A. Quantum wells, D. Spin-orbit effects

ASJC Scopus subject areas

Cite this

Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells. / Bel'kov, V. V.; Ganichev, S. D.; Schneider, Petra et al.
In: Solid State Communications, Vol. 128, No. 8, 03.09.2003, p. 283-286.

Research output: Contribution to journalArticleResearchpeer review

Bel'kov, VV, Ganichev, SD, Schneider, P, Back, C, Oestreich, M, Rudolph, J, Hägele, D, Golub, LE, Wegscheider, W & Prettl, W 2003, 'Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells', Solid State Communications, vol. 128, no. 8, pp. 283-286. https://doi.org/10.1016/j.ssc.2003.08.022
Bel'kov, V. V., Ganichev, S. D., Schneider, P., Back, C., Oestreich, M., Rudolph, J., Hägele, D., Golub, L. E., Wegscheider, W., & Prettl, W. (2003). Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells. Solid State Communications, 128(8), 283-286. https://doi.org/10.1016/j.ssc.2003.08.022
Bel'kov VV, Ganichev SD, Schneider P, Back C, Oestreich M, Rudolph J et al. Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells. Solid State Communications. 2003 Sept 3;128(8):283-286. doi: 10.1016/j.ssc.2003.08.022
Bel'kov, V. V. ; Ganichev, S. D. ; Schneider, Petra et al. / Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells. In: Solid State Communications. 2003 ; Vol. 128, No. 8. pp. 283-286.
Download
@article{c7fa4f765eaa4504ae7764b0beb725dd,
title = "Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells",
abstract = "We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.",
keywords = "A. Quantum wells, D. Spin-orbit effects",
author = "Bel'kov, {V. V.} and Ganichev, {S. D.} and Petra Schneider and C. Back and Michael Oestreich and J{\"o}rg Rudolph and Daniel H{\"a}gele and Golub, {L. E.} and W. Wegscheider and W. Prettl",
note = "Funding information: We thank E.L. Ivchenko for helpful discussions. Authors gratefully acknowledge financial support by the Deutsche Forschungsgemeinschaft (DFG), the INTAS and Programme of RAS.",
year = "2003",
month = sep,
day = "3",
doi = "10.1016/j.ssc.2003.08.022",
language = "English",
volume = "128",
pages = "283--286",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Ltd.",
number = "8",

}

Download

TY - JOUR

T1 - Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells

AU - Bel'kov, V. V.

AU - Ganichev, S. D.

AU - Schneider, Petra

AU - Back, C.

AU - Oestreich, Michael

AU - Rudolph, Jörg

AU - Hägele, Daniel

AU - Golub, L. E.

AU - Wegscheider, W.

AU - Prettl, W.

N1 - Funding information: We thank E.L. Ivchenko for helpful discussions. Authors gratefully acknowledge financial support by the Deutsche Forschungsgemeinschaft (DFG), the INTAS and Programme of RAS.

PY - 2003/9/3

Y1 - 2003/9/3

N2 - We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.

AB - We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.

KW - A. Quantum wells

KW - D. Spin-orbit effects

UR - http://www.scopus.com/inward/record.url?scp=0141964005&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2003.08.022

DO - 10.1016/j.ssc.2003.08.022

M3 - Article

AN - SCOPUS:0141964005

VL - 128

SP - 283

EP - 286

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 8

ER -

By the same author(s)