Details
| Original language | English |
|---|---|
| Pages (from-to) | 4977-4981 |
| Number of pages | 5 |
| Journal | Journal of applied physics |
| Volume | 82 |
| Issue number | 10 |
| Publication status | Published - 15 Nov 1997 |
| Externally published | Yes |
Abstract
We have investigated the temperature dependencies of charge carrier densities and Hall mobilities in tensile strained Si1-yCy and in compressively strained Si1-x-yGexCy layers. In both cases, the measured charge carrier densities at room temperature are not affected substantially by the addition of a small concentration of carbon (<1%) under identical growth conditions and dopant fluxes. The measured Hall mobilities monotonically decrease with increasing carbon content for electrons in Si1-yCy, and for holes in Si1-x-yGexCy, respectively. Our results indicate that electrically active defects are formed with the addition of carbon. These defects are presumably connected with carbon/Si interstitials or other C-related complexes. It seems to be difficult to attribute the formation of those electrically active defects solely to contaminations originating from the used carbon evaporation source. We observed that donor- and acceptor-like defects are formed in Si1-yCy as well as in Si1-x-yGexCy layers with roughly a constant ratio, independent of source temperature.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
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In: Journal of applied physics, Vol. 82, No. 10, 15.11.1997, p. 4977-4981.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Charge transport in strained Si1-yCy and Si1-x-yGexCy alloys on Si(001)
AU - Osten, H. J.
AU - Gaworzewski, P.
PY - 1997/11/15
Y1 - 1997/11/15
N2 - We have investigated the temperature dependencies of charge carrier densities and Hall mobilities in tensile strained Si1-yCy and in compressively strained Si1-x-yGexCy layers. In both cases, the measured charge carrier densities at room temperature are not affected substantially by the addition of a small concentration of carbon (<1%) under identical growth conditions and dopant fluxes. The measured Hall mobilities monotonically decrease with increasing carbon content for electrons in Si1-yCy, and for holes in Si1-x-yGexCy, respectively. Our results indicate that electrically active defects are formed with the addition of carbon. These defects are presumably connected with carbon/Si interstitials or other C-related complexes. It seems to be difficult to attribute the formation of those electrically active defects solely to contaminations originating from the used carbon evaporation source. We observed that donor- and acceptor-like defects are formed in Si1-yCy as well as in Si1-x-yGexCy layers with roughly a constant ratio, independent of source temperature.
AB - We have investigated the temperature dependencies of charge carrier densities and Hall mobilities in tensile strained Si1-yCy and in compressively strained Si1-x-yGexCy layers. In both cases, the measured charge carrier densities at room temperature are not affected substantially by the addition of a small concentration of carbon (<1%) under identical growth conditions and dopant fluxes. The measured Hall mobilities monotonically decrease with increasing carbon content for electrons in Si1-yCy, and for holes in Si1-x-yGexCy, respectively. Our results indicate that electrically active defects are formed with the addition of carbon. These defects are presumably connected with carbon/Si interstitials or other C-related complexes. It seems to be difficult to attribute the formation of those electrically active defects solely to contaminations originating from the used carbon evaporation source. We observed that donor- and acceptor-like defects are formed in Si1-yCy as well as in Si1-x-yGexCy layers with roughly a constant ratio, independent of source temperature.
UR - http://www.scopus.com/inward/record.url?scp=0001512309&partnerID=8YFLogxK
U2 - 10.1063/1.366364
DO - 10.1063/1.366364
M3 - Article
AN - SCOPUS:0001512309
VL - 82
SP - 4977
EP - 4981
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 10
ER -