Details
| Original language | English |
|---|---|
| Title of host publication | Growth, Processing, and Characterization of Semiconductor Heterostructures |
| Pages | 389-394 |
| Number of pages | 6 |
| Publication status | Published - 1994 |
| Externally published | Yes |
| Event | 1993 Fall Meeting of the Materials Research Society - Boston, United States Duration: 29 Nov 1993 → 2 Dec 1993 |
Publication series
| Name | Materials Research Society Symposium Proceedings |
|---|---|
| Volume | 326 |
| ISSN (Print) | 0272-9172 |
Abstract
The aim of the present work is to present a study of carrier capture and emission processes in p-type Si/Si1-xGexSi QW structures. A n+ p-diode with buried Si1-xGex layer was used which allowed DLTS- and admittance spectroscopy on the same QW.
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Mechanics of Materials
- Engineering(all)
- Mechanical Engineering
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Growth, Processing, and Characterization of Semiconductor Heterostructures. 1994. p. 389-394 (Materials Research Society Symposium Proceedings; Vol. 326).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Characterization of valence band offsets in P-Si/SiGe/Si by space charge spectroscopy
AU - Schmalz, K.
AU - Rucker, H.
AU - Yassievich, I. N.
AU - Grimmeiss, H. G.
AU - Mehr, W.
AU - Rankenfeld, H.
AU - Osten, H. J.
AU - Schley, P.
AU - Bababskaya, I.
PY - 1994
Y1 - 1994
N2 - The aim of the present work is to present a study of carrier capture and emission processes in p-type Si/Si1-xGexSi QW structures. A n+ p-diode with buried Si1-xGex layer was used which allowed DLTS- and admittance spectroscopy on the same QW.
AB - The aim of the present work is to present a study of carrier capture and emission processes in p-type Si/Si1-xGexSi QW structures. A n+ p-diode with buried Si1-xGex layer was used which allowed DLTS- and admittance spectroscopy on the same QW.
UR - http://www.scopus.com/inward/record.url?scp=0027931948&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0027931948
SN - 1558992251
T3 - Materials Research Society Symposium Proceedings
SP - 389
EP - 394
BT - Growth, Processing, and Characterization of Semiconductor Heterostructures
T2 - 1993 Fall Meeting of the Materials Research Society
Y2 - 29 November 1993 through 2 December 1993
ER -