Characterization of thin SiGe layers on Si (001) by spectroscopic ellipsometry for Ge fractions from 0 to 100%

Research output: Contribution to journalArticleResearchpeer review

Authors

  • Jan Schmidt
  • Marius Eilert
  • Sven Peters
  • Tobias F. Wietler

External Research Organisations

  • SENTECH Instruments GmbH
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Details

Original languageEnglish
Pages (from-to)772-777
Number of pages6
JournalApplied Surface Science
Volume421
Issue numberB
Early online date21 Aug 2016
Publication statusPublished - 1 Nov 2017

Abstract

We report on the investigation of thin, epitaxially grown Si 1-x Ge x layers on Si(001) substrates by spectroscopic ellipsometry over the entire composition range. Si 1-x Ge x layers with Ge fractions between 17 and 100% at a fixed layer thickness of ∼100 nm were grown on 100 mm Si(001) p-type wafers using surfactant-mediated molecular beam epitaxy with Sb as a surfactant. The degree of strain relaxation increases with Ge fraction, it varies from fully strained layers for low Ge fractions to almost complete relaxation for high Ge fractions. A parameterization is being presented with which the Ge content and layer thickness of thin SiGe layers on Si(001) substrates can be determined. We find a good correlation between the obtained results from the ellipsometry measurements and X-ray diffraction and X-ray reflectometry results, which are used as a reference for sample characterization. We observe that the E 1 interband transition in the band structure of SiGe layers changes almost linearly with the Ge fraction for our samples. We use a modified Lorentz oscillator model to fit the measured curves, using six oscillators for high Ge fractions (x > 0.59) and four oscillators for low Ge fractions (x < 0.59).

Keywords

    Silicon germanium, Spectroscopic ellipsometry, Surfactant-mediated epitaxy, Thin film analysis

ASJC Scopus subject areas

Cite this

Characterization of thin SiGe layers on Si (001) by spectroscopic ellipsometry for Ge fractions from 0 to 100%. / Schmidt, Jan; Eilert, Marius; Peters, Sven et al.
In: Applied Surface Science, Vol. 421, No. B, 01.11.2017, p. 772-777.

Research output: Contribution to journalArticleResearchpeer review

Schmidt J, Eilert M, Peters S, Wietler TF. Characterization of thin SiGe layers on Si (001) by spectroscopic ellipsometry for Ge fractions from 0 to 100%. Applied Surface Science. 2017 Nov 1;421(B):772-777. Epub 2016 Aug 21. doi: 10.1016/j.apsusc.2016.08.091
Schmidt, Jan ; Eilert, Marius ; Peters, Sven et al. / Characterization of thin SiGe layers on Si (001) by spectroscopic ellipsometry for Ge fractions from 0 to 100%. In: Applied Surface Science. 2017 ; Vol. 421, No. B. pp. 772-777.
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abstract = " We report on the investigation of thin, epitaxially grown Si 1-x Ge x layers on Si(001) substrates by spectroscopic ellipsometry over the entire composition range. Si 1-x Ge x layers with Ge fractions between 17 and 100% at a fixed layer thickness of ∼100 nm were grown on 100 mm Si(001) p-type wafers using surfactant-mediated molecular beam epitaxy with Sb as a surfactant. The degree of strain relaxation increases with Ge fraction, it varies from fully strained layers for low Ge fractions to almost complete relaxation for high Ge fractions. A parameterization is being presented with which the Ge content and layer thickness of thin SiGe layers on Si(001) substrates can be determined. We find a good correlation between the obtained results from the ellipsometry measurements and X-ray diffraction and X-ray reflectometry results, which are used as a reference for sample characterization. We observe that the E 1 interband transition in the band structure of SiGe layers changes almost linearly with the Ge fraction for our samples. We use a modified Lorentz oscillator model to fit the measured curves, using six oscillators for high Ge fractions (x > 0.59) and four oscillators for low Ge fractions (x < 0.59). ",
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AU - Schmidt, Jan

AU - Eilert, Marius

AU - Peters, Sven

AU - Wietler, Tobias F.

N1 - Publisher Copyright: © 2016 Elsevier B.V. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.

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N2 - We report on the investigation of thin, epitaxially grown Si 1-x Ge x layers on Si(001) substrates by spectroscopic ellipsometry over the entire composition range. Si 1-x Ge x layers with Ge fractions between 17 and 100% at a fixed layer thickness of ∼100 nm were grown on 100 mm Si(001) p-type wafers using surfactant-mediated molecular beam epitaxy with Sb as a surfactant. The degree of strain relaxation increases with Ge fraction, it varies from fully strained layers for low Ge fractions to almost complete relaxation for high Ge fractions. A parameterization is being presented with which the Ge content and layer thickness of thin SiGe layers on Si(001) substrates can be determined. We find a good correlation between the obtained results from the ellipsometry measurements and X-ray diffraction and X-ray reflectometry results, which are used as a reference for sample characterization. We observe that the E 1 interband transition in the band structure of SiGe layers changes almost linearly with the Ge fraction for our samples. We use a modified Lorentz oscillator model to fit the measured curves, using six oscillators for high Ge fractions (x > 0.59) and four oscillators for low Ge fractions (x < 0.59).

AB - We report on the investigation of thin, epitaxially grown Si 1-x Ge x layers on Si(001) substrates by spectroscopic ellipsometry over the entire composition range. Si 1-x Ge x layers with Ge fractions between 17 and 100% at a fixed layer thickness of ∼100 nm were grown on 100 mm Si(001) p-type wafers using surfactant-mediated molecular beam epitaxy with Sb as a surfactant. The degree of strain relaxation increases with Ge fraction, it varies from fully strained layers for low Ge fractions to almost complete relaxation for high Ge fractions. A parameterization is being presented with which the Ge content and layer thickness of thin SiGe layers on Si(001) substrates can be determined. We find a good correlation between the obtained results from the ellipsometry measurements and X-ray diffraction and X-ray reflectometry results, which are used as a reference for sample characterization. We observe that the E 1 interband transition in the band structure of SiGe layers changes almost linearly with the Ge fraction for our samples. We use a modified Lorentz oscillator model to fit the measured curves, using six oscillators for high Ge fractions (x > 0.59) and four oscillators for low Ge fractions (x < 0.59).

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