Details
| Original language | English |
|---|---|
| Pages (from-to) | 945-948 |
| Number of pages | 4 |
| Journal | Solid state electronics |
| Volume | 37 |
| Issue number | 4-6 |
| Publication status | Published - Apr 1994 |
| Externally published | Yes |
Abstract
Results are presented concerning direct comparison of admittance spectroscopy and DLTS on p-Si/Si1-xGex/Si quantum well (QW) structures with x = 0.17 using n+p mesa diodes with buried QW layer. The temperature dependence of potential barriers at the QW and of the Fermi level determine the activation energy Ea of the conductance across the QW. From Ea a band offset of ΔEv = 0.16 eV was estimated. DLTS data suggest that hole emission from QW was observed with activation energy in correspondence with ΔEv.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Materials Science(all)
- Materials Chemistry
- Engineering(all)
- Electrical and Electronic Engineering
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In: Solid state electronics, Vol. 37, No. 4-6, 04.1994, p. 945-948.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Characterization of the valence band offset in p-Si/Si1-xGex/Si by space charge spectroscopy
AU - Schmalz, K.
AU - Rücker, H.
AU - Yassievich, I. N.
AU - Grimmeiss, H. G.
AU - Dietrich, B.
AU - Frankenfeld, H.
AU - Mehr, W.
AU - Osten, H. J.
AU - Schley, P.
PY - 1994/4
Y1 - 1994/4
N2 - Results are presented concerning direct comparison of admittance spectroscopy and DLTS on p-Si/Si1-xGex/Si quantum well (QW) structures with x = 0.17 using n+p mesa diodes with buried QW layer. The temperature dependence of potential barriers at the QW and of the Fermi level determine the activation energy Ea of the conductance across the QW. From Ea a band offset of ΔEv = 0.16 eV was estimated. DLTS data suggest that hole emission from QW was observed with activation energy in correspondence with ΔEv.
AB - Results are presented concerning direct comparison of admittance spectroscopy and DLTS on p-Si/Si1-xGex/Si quantum well (QW) structures with x = 0.17 using n+p mesa diodes with buried QW layer. The temperature dependence of potential barriers at the QW and of the Fermi level determine the activation energy Ea of the conductance across the QW. From Ea a band offset of ΔEv = 0.16 eV was estimated. DLTS data suggest that hole emission from QW was observed with activation energy in correspondence with ΔEv.
UR - http://www.scopus.com/inward/record.url?scp=0028408397&partnerID=8YFLogxK
U2 - 10.1016/0038-1101(94)90332-8
DO - 10.1016/0038-1101(94)90332-8
M3 - Article
AN - SCOPUS:0028408397
VL - 37
SP - 945
EP - 948
JO - Solid state electronics
JF - Solid state electronics
SN - 0038-1101
IS - 4-6
ER -