Details
| Original language | English |
|---|---|
| Pages (from-to) | 116-118 |
| Number of pages | 3 |
| Journal | IEEE electron device letters |
| Volume | 20 |
| Issue number | 3 |
| Publication status | Published - Mar 1999 |
| Externally published | Yes |
Abstract
An electrical method is applied to SiGe and SiGe:C heterojunction bipolar transistors (HBT's) to extract the bandgap narrowing in the base layer and to characterize the presence of parasitic energy barriers in the conduction band, arising from boron transient enhanced out-diffusion from the SiGe layer. It is shown that a background carbon concentration within the base (≈1020 cm-3) eliminates parasitic energy barriers at the collector/base junction, and hence shows that transient enhanced diffusion of boron from the base has been completely suppressed.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Engineering(all)
- Electrical and Electronic Engineering
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In: IEEE electron device letters, Vol. 20, No. 3, 03.1999, p. 116-118.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Characterization of the Effectiveness of Carbon Incorporation in SiGe for the Elimination of Parasitic Energy Barriers in SiGe HBT's
AU - Anteney, I. M.
AU - Lippert, G.
AU - Ashburn, P.
AU - Osten, H. J.
AU - Heinemann, B.
AU - Parker, G. J.
AU - Knoll, D.
PY - 1999/3
Y1 - 1999/3
N2 - An electrical method is applied to SiGe and SiGe:C heterojunction bipolar transistors (HBT's) to extract the bandgap narrowing in the base layer and to characterize the presence of parasitic energy barriers in the conduction band, arising from boron transient enhanced out-diffusion from the SiGe layer. It is shown that a background carbon concentration within the base (≈1020 cm-3) eliminates parasitic energy barriers at the collector/base junction, and hence shows that transient enhanced diffusion of boron from the base has been completely suppressed.
AB - An electrical method is applied to SiGe and SiGe:C heterojunction bipolar transistors (HBT's) to extract the bandgap narrowing in the base layer and to characterize the presence of parasitic energy barriers in the conduction band, arising from boron transient enhanced out-diffusion from the SiGe layer. It is shown that a background carbon concentration within the base (≈1020 cm-3) eliminates parasitic energy barriers at the collector/base junction, and hence shows that transient enhanced diffusion of boron from the base has been completely suppressed.
UR - http://www.scopus.com/inward/record.url?scp=0033098895&partnerID=8YFLogxK
U2 - 10.1109/55.748906
DO - 10.1109/55.748906
M3 - Article
AN - SCOPUS:0033098895
VL - 20
SP - 116
EP - 118
JO - IEEE electron device letters
JF - IEEE electron device letters
SN - 0741-3106
IS - 3
ER -