Details
| Original language | English |
|---|---|
| Pages (from-to) | 61-64 |
| Number of pages | 4 |
| Journal | THIN SOLID FILMS |
| Volume | 221 |
| Issue number | 1-2 |
| Publication status | Published - 10 Dec 1992 |
| Externally published | Yes |
Abstract
The behaviour of antimony deposited in different ways as surfactant in 30 nm germanium-rich Si1-x Gex molecular beam epitaxy films on Si(100) has been analysed by means of secondary-ion mass spectrometry (SIMS) and Auger electron spectroscopy. It was shown that antimony partially remains at the deposition place, a minor amount is incorporated into the growing film and a significant part segregates at the surface. By means of low energy SIMS (1-3 keV Cs+ beams) at elevated angles of incidence, surfactant introduction has been analysed with subnanometre depth resolution. The full width at half-maximum of the SIMS antimony profile corresponds to the estimated diffusion broadening in the case of sequential deposition and shows significant profile smearing in the case of coevaporation.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Materials Science(all)
- Surfaces, Coatings and Films
- Materials Science(all)
- Metals and Alloys
- Materials Science(all)
- Materials Chemistry
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In: THIN SOLID FILMS, Vol. 221, No. 1-2, 10.12.1992, p. 61-64.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Characterization of surfactant introduction into germanium-rich Si1-x Gex molecular beam epitaxy layer growth on silicon by means of secondary-ion mass spectrometry and Auger electron spectroscopy
AU - Krüeger, D.
AU - Kurps, R.
AU - Osten, H. J.
AU - Lippert, G.
AU - Roeser, D.
PY - 1992/12/10
Y1 - 1992/12/10
N2 - The behaviour of antimony deposited in different ways as surfactant in 30 nm germanium-rich Si1-x Gex molecular beam epitaxy films on Si(100) has been analysed by means of secondary-ion mass spectrometry (SIMS) and Auger electron spectroscopy. It was shown that antimony partially remains at the deposition place, a minor amount is incorporated into the growing film and a significant part segregates at the surface. By means of low energy SIMS (1-3 keV Cs+ beams) at elevated angles of incidence, surfactant introduction has been analysed with subnanometre depth resolution. The full width at half-maximum of the SIMS antimony profile corresponds to the estimated diffusion broadening in the case of sequential deposition and shows significant profile smearing in the case of coevaporation.
AB - The behaviour of antimony deposited in different ways as surfactant in 30 nm germanium-rich Si1-x Gex molecular beam epitaxy films on Si(100) has been analysed by means of secondary-ion mass spectrometry (SIMS) and Auger electron spectroscopy. It was shown that antimony partially remains at the deposition place, a minor amount is incorporated into the growing film and a significant part segregates at the surface. By means of low energy SIMS (1-3 keV Cs+ beams) at elevated angles of incidence, surfactant introduction has been analysed with subnanometre depth resolution. The full width at half-maximum of the SIMS antimony profile corresponds to the estimated diffusion broadening in the case of sequential deposition and shows significant profile smearing in the case of coevaporation.
UR - http://www.scopus.com/inward/record.url?scp=0026980875&partnerID=8YFLogxK
U2 - 10.1016/0040-6090(92)90796-E
DO - 10.1016/0040-6090(92)90796-E
M3 - Article
AN - SCOPUS:0026980875
VL - 221
SP - 61
EP - 64
JO - THIN SOLID FILMS
JF - THIN SOLID FILMS
SN - 0040-6090
IS - 1-2
ER -