Characterization of Si/Si1-xGex/Si quantum wells by space-charge spectroscopy

Research output: Contribution to journalArticleResearchpeer review

Authors

  • K. Schmalz
  • I. N. Yassievich
  • H. Rücker
  • H. G. Grimmeiss
  • H. Frankenfeld
  • W. Mehr
  • H. J. Osten
  • P. Schley
  • H. P. Zeindl

External Research Organisations

  • Leibniz Institute for High Performance Microelectronics (IHP)
  • RAS - Ioffe Physico Technical Institute
  • Lund University
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Details

Original languageEnglish
Pages (from-to)14287-14301
Number of pages15
JournalPhysical Review B
Volume50
Issue number19
Publication statusPublished - 1994
Externally publishedYes

Abstract

Results are presented concerning the electrical characterization of p-Si/Si1-xGex/Si quantum well (QW) structures by admittance spectroscopy, capacitance measurements, and deep-level transient spectroscopy (DLTS). The capture and emission processes of holes in QW structures are theoretically analyzed for equilibrium and nonequilibrium conditions taking into account external electric fields as well as local electric fields induced by confined charge carriers. The temperature dependence of potential barriers at the QW and of the Fermi level determines the activation energy Ea of the conductance across the QW. Admittance spectroscopy data of QW's with x=0.25 and thicknesses in the range from 1 to 5 nm are in fair agreement with the proposed theoretical model. Hole emission from the QW region was studied by DLTS investigations on n+p mesa diodes for QW's with x=0.17.

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Cite this

Characterization of Si/Si1-xGex/Si quantum wells by space-charge spectroscopy. / Schmalz, K.; Yassievich, I. N.; Rücker, H. et al.
In: Physical Review B, Vol. 50, No. 19, 1994, p. 14287-14301.

Research output: Contribution to journalArticleResearchpeer review

Schmalz, K, Yassievich, IN, Rücker, H, Grimmeiss, HG, Frankenfeld, H, Mehr, W, Osten, HJ, Schley, P & Zeindl, HP 1994, 'Characterization of Si/Si1-xGex/Si quantum wells by space-charge spectroscopy', Physical Review B, vol. 50, no. 19, pp. 14287-14301. https://doi.org/10.1103/PhysRevB.50.14287
Schmalz, K., Yassievich, I. N., Rücker, H., Grimmeiss, H. G., Frankenfeld, H., Mehr, W., Osten, H. J., Schley, P., & Zeindl, H. P. (1994). Characterization of Si/Si1-xGex/Si quantum wells by space-charge spectroscopy. Physical Review B, 50(19), 14287-14301. https://doi.org/10.1103/PhysRevB.50.14287
Schmalz K, Yassievich IN, Rücker H, Grimmeiss HG, Frankenfeld H, Mehr W et al. Characterization of Si/Si1-xGex/Si quantum wells by space-charge spectroscopy. Physical Review B. 1994;50(19):14287-14301. doi: 10.1103/PhysRevB.50.14287
Schmalz, K. ; Yassievich, I. N. ; Rücker, H. et al. / Characterization of Si/Si1-xGex/Si quantum wells by space-charge spectroscopy. In: Physical Review B. 1994 ; Vol. 50, No. 19. pp. 14287-14301.
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abstract = "Results are presented concerning the electrical characterization of p-Si/Si1-xGex/Si quantum well (QW) structures by admittance spectroscopy, capacitance measurements, and deep-level transient spectroscopy (DLTS). The capture and emission processes of holes in QW structures are theoretically analyzed for equilibrium and nonequilibrium conditions taking into account external electric fields as well as local electric fields induced by confined charge carriers. The temperature dependence of potential barriers at the QW and of the Fermi level determines the activation energy Ea of the conductance across the QW. Admittance spectroscopy data of QW's with x=0.25 and thicknesses in the range from 1 to 5 nm are in fair agreement with the proposed theoretical model. Hole emission from the QW region was studied by DLTS investigations on n+p mesa diodes for QW's with x=0.17.",
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AU - Yassievich, I. N.

AU - Rücker, H.

AU - Grimmeiss, H. G.

AU - Frankenfeld, H.

AU - Mehr, W.

AU - Osten, H. J.

AU - Schley, P.

AU - Zeindl, H. P.

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