Details
| Original language | English |
|---|---|
| Title of host publication | Gettering and Defect Engineering in Semiconductor Technology, GADEST 93 |
| Editors | H.G. Grimmeiss, M. Kittler, H. Richter |
| Pages | 595-600 |
| Number of pages | 6 |
| Publication status | Published - Dec 1993 |
| Externally published | Yes |
| Event | 5th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST 1993 - Chossewitz, Frankfurt (Oder), Germany Duration: 9 Oct 1993 → 14 Oct 1993 |
Publication series
| Name | Solid State Phenomena |
|---|---|
| Volume | 32-33 |
| ISSN (Print) | 1012-0394 |
| ISSN (electronic) | 1662-9779 |
Abstract
Capture and emission proceses of holes in quantum well (QW) structures are investigated using admittance spectroscopy and DLTS. A direct comparison of both methods is given for p- Si/S1-XGex/Si n+p mesa diodes with x = 0.17. The experimental results are analysed taking into account the external electric field as well as internal electric fields induced by holes confined in the QW. The temperature dependence of potential barriers at the QW and of the Fermi level determine the activation energy Ea of the conductance across the QW. From Ea band offset of ΔEV = 0.16 eV was estimated. DLTS data suggest that hole emission from QW was observed with activation energy in correspondence with ΔEV.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Materials Science(all)
- Physics and Astronomy(all)
- Condensed Matter Physics
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Gettering and Defect Engineering in Semiconductor Technology, GADEST 93. ed. / H.G. Grimmeiss; M. Kittler; H. Richter. 1993. p. 595-600 (Solid State Phenomena; Vol. 32-33).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Characterization of MBE grown Si/Si1-x(Gex/Si structures using n+ p-diodes
AU - Schmalz, K.
AU - Rücker, H.
AU - Grimmeiss, H. G.
AU - Dietrich, B.
AU - Frankenfeld, H.
AU - Mehr, W.
AU - Osten, H. J.
AU - Schley, P.
PY - 1993/12
Y1 - 1993/12
N2 - Capture and emission proceses of holes in quantum well (QW) structures are investigated using admittance spectroscopy and DLTS. A direct comparison of both methods is given for p- Si/S1-XGex/Si n+p mesa diodes with x = 0.17. The experimental results are analysed taking into account the external electric field as well as internal electric fields induced by holes confined in the QW. The temperature dependence of potential barriers at the QW and of the Fermi level determine the activation energy Ea of the conductance across the QW. From Ea band offset of ΔEV = 0.16 eV was estimated. DLTS data suggest that hole emission from QW was observed with activation energy in correspondence with ΔEV.
AB - Capture and emission proceses of holes in quantum well (QW) structures are investigated using admittance spectroscopy and DLTS. A direct comparison of both methods is given for p- Si/S1-XGex/Si n+p mesa diodes with x = 0.17. The experimental results are analysed taking into account the external electric field as well as internal electric fields induced by holes confined in the QW. The temperature dependence of potential barriers at the QW and of the Fermi level determine the activation energy Ea of the conductance across the QW. From Ea band offset of ΔEV = 0.16 eV was estimated. DLTS data suggest that hole emission from QW was observed with activation energy in correspondence with ΔEV.
UR - http://www.scopus.com/inward/record.url?scp=84955127961&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/SSP.32-33.595
DO - 10.4028/www.scientific.net/SSP.32-33.595
M3 - Conference contribution
AN - SCOPUS:84955127961
SN - 9783908450009
T3 - Solid State Phenomena
SP - 595
EP - 600
BT - Gettering and Defect Engineering in Semiconductor Technology, GADEST 93
A2 - Grimmeiss, H.G.
A2 - Kittler, M.
A2 - Richter, H.
T2 - 5th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST 1993
Y2 - 9 October 1993 through 14 October 1993
ER -